SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells
In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/670438 |
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| author | Minghua Li Hui Shen Lin Zhuang Daming Chen Xinghua Liang |
| author_facet | Minghua Li Hui Shen Lin Zhuang Daming Chen Xinghua Liang |
| author_sort | Minghua Li |
| collection | DOAJ |
| description | In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells. |
| format | Article |
| id | doaj-art-a2bfee343b3c4a82947d257cec39809d |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-a2bfee343b3c4a82947d257cec39809d2025-08-20T02:20:37ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/670438670438SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar CellsMinghua Li0Hui Shen1Lin Zhuang2Daming Chen3Xinghua Liang4School of Electrical Engineering, Guangdong Mechanical & Electrical College, Guangzhou 510515, ChinaInstitute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technologies, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, ChinaInstitute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technologies, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, ChinaInstitute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technologies, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, ChinaKey Laboratory of Automobile Components and Vehicle Technology in Guangxi, Guangxi University of Science and Technology, Liuzhou 545006, ChinaIn this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.http://dx.doi.org/10.1155/2014/670438 |
| spellingShingle | Minghua Li Hui Shen Lin Zhuang Daming Chen Xinghua Liang SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells International Journal of Photoenergy |
| title | SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells |
| title_full | SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells |
| title_fullStr | SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells |
| title_full_unstemmed | SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells |
| title_short | SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells |
| title_sort | sio2 antireflection coatings fabricated by electron beam evaporation for black monocrystalline silicon solar cells |
| url | http://dx.doi.org/10.1155/2014/670438 |
| work_keys_str_mv | AT minghuali sio2antireflectioncoatingsfabricatedbyelectronbeamevaporationforblackmonocrystallinesiliconsolarcells AT huishen sio2antireflectioncoatingsfabricatedbyelectronbeamevaporationforblackmonocrystallinesiliconsolarcells AT linzhuang sio2antireflectioncoatingsfabricatedbyelectronbeamevaporationforblackmonocrystallinesiliconsolarcells AT damingchen sio2antireflectioncoatingsfabricatedbyelectronbeamevaporationforblackmonocrystallinesiliconsolarcells AT xinghualiang sio2antireflectioncoatingsfabricatedbyelectronbeamevaporationforblackmonocrystallinesiliconsolarcells |