Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures
Laser Power Transmission is emerging as a highly promising method for wireless energy transfer, particularly for extending the operational endurance of small unmanned aerial vehicles and supporting the construction of space-based solar power stations. This study investigated the optimal operational...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/adaac5 |
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| author | Junyue Zhang Shunhua Wu Jiachen Liu Weizhou Huang Lei Ling Qingkai Meng Rui Zhang Lang Chen Jiachen Zhang Zhenfu Wang Te Li |
| author_facet | Junyue Zhang Shunhua Wu Jiachen Liu Weizhou Huang Lei Ling Qingkai Meng Rui Zhang Lang Chen Jiachen Zhang Zhenfu Wang Te Li |
| author_sort | Junyue Zhang |
| collection | DOAJ |
| description | Laser Power Transmission is emerging as a highly promising method for wireless energy transfer, particularly for extending the operational endurance of small unmanned aerial vehicles and supporting the construction of space-based solar power stations. This study investigated the optimal operational parameters of single-junction gallium arsenide (GaAs) photovoltaic (PV) cells under laser diode irradiation to enhance the efficiency of LPT systems. A detailed theoretical analysis was conducted to examine the effects of incident light intensity and spot size on the photoelectric conversion efficiency of GaAs PV cells across different temperature ranges. Experimental results demonstrated that as the temperature decreases from 55 °C to 5 °C, the incident intensity required for the photovoltaic cells to achieve peak efficiency rises from 0.35 W cm ^−2 to 0.65 W cm ^−2 . Consequently, higher incident intensities are necessary for optimal efficiency when PV cells operate at lower temperatures. The 2 cm photovoltaic cells can attain a conversion efficiency exceeding 50% only when exposed to a 2 cm incident light spot. Therefore, high efficiency in photovoltaic cells is attainable solely when the size of the incident light spot is as closely matched to the cell’s size as possible. Additionally, this study provides an in-depth discussion of factors limiting photoelectric conversion efficiency and the underlying mechanisms at various temperature conditions. |
| format | Article |
| id | doaj-art-a2b635dfa25e4f83822704bae9b9675d |
| institution | Kabale University |
| issn | 2053-1591 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj-art-a2b635dfa25e4f83822704bae9b9675d2025-02-11T14:15:15ZengIOP PublishingMaterials Research Express2053-15912025-01-0112202590210.1088/2053-1591/adaac5Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperaturesJunyue Zhang0https://orcid.org/0009-0003-1887-4312Shunhua Wu1Jiachen Liu2Weizhou Huang3Lei Ling4Qingkai Meng5Rui Zhang6Lang Chen7Jiachen Zhang8Zhenfu Wang9Te Li10https://orcid.org/0000-0001-6126-2192State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of China; University of Chinese Academy of Sciences , Beijing, 100049, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of China; University of Chinese Academy of Sciences , Beijing, 100049, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of China; University of Chinese Academy of Sciences , Beijing, 100049, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of China; University of Chinese Academy of Sciences , Beijing, 100049, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of China; University of Chinese Academy of Sciences , Beijing, 100049, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of China; University of Chinese Academy of Sciences , Beijing, 100049, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of ChinaState Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, 710119, People’s Republic of ChinaLaser Power Transmission is emerging as a highly promising method for wireless energy transfer, particularly for extending the operational endurance of small unmanned aerial vehicles and supporting the construction of space-based solar power stations. This study investigated the optimal operational parameters of single-junction gallium arsenide (GaAs) photovoltaic (PV) cells under laser diode irradiation to enhance the efficiency of LPT systems. A detailed theoretical analysis was conducted to examine the effects of incident light intensity and spot size on the photoelectric conversion efficiency of GaAs PV cells across different temperature ranges. Experimental results demonstrated that as the temperature decreases from 55 °C to 5 °C, the incident intensity required for the photovoltaic cells to achieve peak efficiency rises from 0.35 W cm ^−2 to 0.65 W cm ^−2 . Consequently, higher incident intensities are necessary for optimal efficiency when PV cells operate at lower temperatures. The 2 cm photovoltaic cells can attain a conversion efficiency exceeding 50% only when exposed to a 2 cm incident light spot. Therefore, high efficiency in photovoltaic cells is attainable solely when the size of the incident light spot is as closely matched to the cell’s size as possible. Additionally, this study provides an in-depth discussion of factors limiting photoelectric conversion efficiency and the underlying mechanisms at various temperature conditions.https://doi.org/10.1088/2053-1591/adaac5laser power transmissionphotoelectric conversion efficiencyincident intensitytemperatureGaAs |
| spellingShingle | Junyue Zhang Shunhua Wu Jiachen Liu Weizhou Huang Lei Ling Qingkai Meng Rui Zhang Lang Chen Jiachen Zhang Zhenfu Wang Te Li Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures Materials Research Express laser power transmission photoelectric conversion efficiency incident intensity temperature GaAs |
| title | Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures |
| title_full | Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures |
| title_fullStr | Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures |
| title_full_unstemmed | Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures |
| title_short | Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures |
| title_sort | investigating the effect of incident intensity on single junction gaas pv cells conversion efficiency at different temperatures |
| topic | laser power transmission photoelectric conversion efficiency incident intensity temperature GaAs |
| url | https://doi.org/10.1088/2053-1591/adaac5 |
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