Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors
We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\...
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2020-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9099040/ |
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| author | Harshvardhan Kumar Rikmantra Basu Guo-En Chang |
| author_facet | Harshvardhan Kumar Rikmantra Basu Guo-En Chang |
| author_sort | Harshvardhan Kumar |
| collection | DOAJ |
| description | We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\rm{S}}{{\rm{n}}_x}$</tex-math></inline-formula> alloy in the base of our HPTs significantly shortens the emitter-to-collector transit time, leading to high cut-off frequency (<inline-formula><tex-math notation="LaTeX">${f_T}$</tex-math></inline-formula>) due to an increase in mobility. Furthermore, the <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\rm{S}}{{\rm{n}}_x}$</tex-math></inline-formula> base extends the optical detection over a wide range (up to 2500 nm) due to the shrinkage of the bandgap energy caused by alloying with Sn. Additionally, spectral responsivity increases with Sn alloying due to the increased absorption coefficient. Our results show that <inline-formula><tex-math notation="LaTeX">${f_T}$</tex-math></inline-formula> and responsivity are strongly dependent not only on doping but also on temperature. The impact of temperature on the noise behavior of phototransistors was also analyzed for frequencies up to 100 GHz. As the temperature increased, the signal-to-noise ratio (SNR) decreased; however, spectral responsivity significantly improved. The high SNR, responsivity, and <inline-formula><tex-math notation="LaTeX">${f_T}$</tex-math></inline-formula> values of the GeSn HPT make it a potential candidate for future Si-based uncooled high-speed MIR photodetection. |
| format | Article |
| id | doaj-art-a2b515e1ce2e487dadeee61bb4f86a0b |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-a2b515e1ce2e487dadeee61bb4f86a0b2025-08-20T03:32:37ZengIEEEIEEE Photonics Journal1943-06552020-01-0112311410.1109/JPHOT.2020.29968089099040Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction PhototransistorsHarshvardhan Kumar0https://orcid.org/0000-0002-4803-810XRikmantra Basu1Guo-En Chang2https://orcid.org/0000-0002-3739-5451Electronics and Communication Engineering Department, National Institute of Technology Delhi, Institutional Area, IAMR Campus, New Delhi, IndiaElectronics and Communication Engineering Department, National Institute of Technology Delhi, Institutional Area, IAMR Campus, New Delhi, IndiaDepartment of Mechanical Engineering and Advanced Institute of Manufacturing with High-Tech Innovations, National Chung Cheng University, Chiayi County, TaiwanWe study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\rm{S}}{{\rm{n}}_x}$</tex-math></inline-formula> alloy in the base of our HPTs significantly shortens the emitter-to-collector transit time, leading to high cut-off frequency (<inline-formula><tex-math notation="LaTeX">${f_T}$</tex-math></inline-formula>) due to an increase in mobility. Furthermore, the <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\rm{S}}{{\rm{n}}_x}$</tex-math></inline-formula> base extends the optical detection over a wide range (up to 2500 nm) due to the shrinkage of the bandgap energy caused by alloying with Sn. Additionally, spectral responsivity increases with Sn alloying due to the increased absorption coefficient. Our results show that <inline-formula><tex-math notation="LaTeX">${f_T}$</tex-math></inline-formula> and responsivity are strongly dependent not only on doping but also on temperature. The impact of temperature on the noise behavior of phototransistors was also analyzed for frequencies up to 100 GHz. As the temperature increased, the signal-to-noise ratio (SNR) decreased; however, spectral responsivity significantly improved. The high SNR, responsivity, and <inline-formula><tex-math notation="LaTeX">${f_T}$</tex-math></inline-formula> values of the GeSn HPT make it a potential candidate for future Si-based uncooled high-speed MIR photodetection.https://ieeexplore.ieee.org/document/9099040/Cut-off frequencydopingGeSn alloyheterojunction phototransistor (HPT)responsivitytemperature |
| spellingShingle | Harshvardhan Kumar Rikmantra Basu Guo-En Chang Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors IEEE Photonics Journal Cut-off frequency doping GeSn alloy heterojunction phototransistor (HPT) responsivity temperature |
| title | Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors |
| title_full | Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors |
| title_fullStr | Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors |
| title_full_unstemmed | Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors |
| title_short | Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors |
| title_sort | impact of temperature and doping on the performance of inline formula tex math notation latex bf ge bf g bf e 1 boldsymbol x bf s bf n boldsymbol x bf ge tex math inline formula heterojunction phototransistors |
| topic | Cut-off frequency doping GeSn alloy heterojunction phototransistor (HPT) responsivity temperature |
| url | https://ieeexplore.ieee.org/document/9099040/ |
| work_keys_str_mv | AT harshvardhankumar impactoftemperatureanddopingontheperformanceofinlineformulatexmathnotationlatexbfgebfgbfe1boldsymbolxbfsbfnboldsymbolxbfgetexmathinlineformulaheterojunctionphototransistors AT rikmantrabasu impactoftemperatureanddopingontheperformanceofinlineformulatexmathnotationlatexbfgebfgbfe1boldsymbolxbfsbfnboldsymbolxbfgetexmathinlineformulaheterojunctionphototransistors AT guoenchang impactoftemperatureanddopingontheperformanceofinlineformulatexmathnotationlatexbfgebfgbfe1boldsymbolxbfsbfnboldsymbolxbfgetexmathinlineformulaheterojunctionphototransistors |