Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices
Piezoelectric micromachined ultrasonic transducers (p-MUTs) have been extensively utilized in medical imaging, range-finding, gesture recognition, and so on. However, the piezoelectric layer is dominated by the toxic Pb(Zr, Ti)O3, other materials possess inferior piezoelectric coefficients, and the...
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Elsevier
2025-01-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847824000431 |
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| author | Xingxu Zhang Hao Wu Yuhui Zhang Jian Luo Tao Ye Kai Tao Jinjun Deng Binghe Ma Weizheng Yuan |
| author_facet | Xingxu Zhang Hao Wu Yuhui Zhang Jian Luo Tao Ye Kai Tao Jinjun Deng Binghe Ma Weizheng Yuan |
| author_sort | Xingxu Zhang |
| collection | DOAJ |
| description | Piezoelectric micromachined ultrasonic transducers (p-MUTs) have been extensively utilized in medical imaging, range-finding, gesture recognition, and so on. However, the piezoelectric layer is dominated by the toxic Pb(Zr, Ti)O3, other materials possess inferior piezoelectric coefficients, and the traditional clamped diaphragm restricts the p-MUT response. In this work, lead-free ZnO films are doped by the vanadium nanostructures and are implemented to beam-island structure membranes, which are aimed to achieve non-toxic and high-performance p-MUTs. Firstly, the doping mechanism of ZnO is analyzed and the p-MUT structure is designed. Secondly, simulation based on the finite element method is conducted to evaluate the dynamic displacement of p-MUTs, after which prototypes are fabricated by the standard micromachined process. The effects of key fabrication parameters including O2 flow rates, sputtering targets, and annealing temperatures on V-doped ZnO films are investigated in detail. By using atomic force microscopy (AFM) and X-ray diffraction (XRD), the surface morphology and crystal structure of the films are analyzed respectively. Moreover, the piezoelectric properties are measured by piezo response force microscopy (PFM). The results indicate a piezoelectric coefficient as high as 194.5 pm/V, which is superior to most doped ZnO films. Finally, an experimental testing system is established to examine the p-MUT performance. Compared with the clamped diaphragm, the beam-island structure can acquire better electromechanical coupling and achieve range-finding successfully. This work provides a fine application prospect for enhancing the performance of lead-free p-MUTs. |
| format | Article |
| id | doaj-art-a26da21186604dc18d2a2fc5c6632782 |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-a26da21186604dc18d2a2fc5c66327822025-01-04T04:56:34ZengElsevierJournal of Materiomics2352-84782025-01-01111100849Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devicesXingxu Zhang0Hao Wu1Yuhui Zhang2Jian Luo3Tao Ye4Kai Tao5Jinjun Deng6Binghe Ma7Weizheng Yuan8Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaMinistry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaMinistry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaCorresponding author.; Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaMinistry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaMinistry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaMinistry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaCorresponding author.; Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaCorresponding author.; Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace, Northwestern Polytechnical University, Xi'an, 710072, ChinaPiezoelectric micromachined ultrasonic transducers (p-MUTs) have been extensively utilized in medical imaging, range-finding, gesture recognition, and so on. However, the piezoelectric layer is dominated by the toxic Pb(Zr, Ti)O3, other materials possess inferior piezoelectric coefficients, and the traditional clamped diaphragm restricts the p-MUT response. In this work, lead-free ZnO films are doped by the vanadium nanostructures and are implemented to beam-island structure membranes, which are aimed to achieve non-toxic and high-performance p-MUTs. Firstly, the doping mechanism of ZnO is analyzed and the p-MUT structure is designed. Secondly, simulation based on the finite element method is conducted to evaluate the dynamic displacement of p-MUTs, after which prototypes are fabricated by the standard micromachined process. The effects of key fabrication parameters including O2 flow rates, sputtering targets, and annealing temperatures on V-doped ZnO films are investigated in detail. By using atomic force microscopy (AFM) and X-ray diffraction (XRD), the surface morphology and crystal structure of the films are analyzed respectively. Moreover, the piezoelectric properties are measured by piezo response force microscopy (PFM). The results indicate a piezoelectric coefficient as high as 194.5 pm/V, which is superior to most doped ZnO films. Finally, an experimental testing system is established to examine the p-MUT performance. Compared with the clamped diaphragm, the beam-island structure can acquire better electromechanical coupling and achieve range-finding successfully. This work provides a fine application prospect for enhancing the performance of lead-free p-MUTs.http://www.sciencedirect.com/science/article/pii/S2352847824000431V-doped ZnOLead-freePiezoelectric micromachined ultrasonic transducersBeam-island structureEnhanced performance |
| spellingShingle | Xingxu Zhang Hao Wu Yuhui Zhang Jian Luo Tao Ye Kai Tao Jinjun Deng Binghe Ma Weizheng Yuan Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices Journal of Materiomics V-doped ZnO Lead-free Piezoelectric micromachined ultrasonic transducers Beam-island structure Enhanced performance |
| title | Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices |
| title_full | Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices |
| title_fullStr | Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices |
| title_full_unstemmed | Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices |
| title_short | Fabrication and characterization of V-doped ZnO films implemented to lead-free piezoelectric micromachined devices |
| title_sort | fabrication and characterization of v doped zno films implemented to lead free piezoelectric micromachined devices |
| topic | V-doped ZnO Lead-free Piezoelectric micromachined ultrasonic transducers Beam-island structure Enhanced performance |
| url | http://www.sciencedirect.com/science/article/pii/S2352847824000431 |
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