Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures
Abstract This work demonstrates the floating gate devices featuring a small molecule‐insulator‐small molecule‐insulator sandwiched structure, where the versatile electrical characteristics can be achieved depending on the thickness of the intermediate parylene tunneling dielectric layer (TDL). For t...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400910 |
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| author | Dong Hyun Lee Yunchae Jeon Junhwan Choi Hocheon Yoo |
| author_facet | Dong Hyun Lee Yunchae Jeon Junhwan Choi Hocheon Yoo |
| author_sort | Dong Hyun Lee |
| collection | DOAJ |
| description | Abstract This work demonstrates the floating gate devices featuring a small molecule‐insulator‐small molecule‐insulator sandwiched structure, where the versatile electrical characteristics can be achieved depending on the thickness of the intermediate parylene tunneling dielectric layer (TDL). For the thin parylene layer of 15 nm (parallel DNTT channel transistor), channel also forms in the lower DNTT layer, allowing hole carriers to tunnel through the parylene TDL. The parallel DNTT channel transistor exhibits electrical characteristics similar to a conventional DNTT transistor with the increased contact resistance due to the presence of the intermediate parylene layer. When the parylene TDL is slightly thicker to be 45 nm, negative differential transconductance followed by current saturation behavior is observed, due to tunneling through the parylene TDL. Finally, photomemory is demonstrated with the sufficiently thick parylene layer (≈80 nm), where hole carriers injected from the electrode cannot tunnel through the parylene TDL, allowing the lower DNTT layer to act as a floating gate for the photogenerated charge carriers. This photomemory shows programmability under the light illumination with the specific wavelength as well as the robust retention and endurance characteristics. Furthermore, the photomemory has been successfully implemented on flexible paper substrates. |
| format | Article |
| id | doaj-art-a1e63c0952ef48418c10d9bbe5b58e17 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-a1e63c0952ef48418c10d9bbe5b58e172025-08-20T02:12:40ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-04-01115n/an/a10.1002/aelm.202400910Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer StructuresDong Hyun Lee0Yunchae Jeon1Junhwan Choi2Hocheon Yoo3Department of Semiconductor Engineering Gachon University Seongnam Gyeonggi 13120 Republic of KoreaDepartment of Electronic Engineering Gachon University Seongnam Gyeonggi 13120 Republic of KoreaDepartment of Chemical Engineering Dankook University Yongin Gyeonggi 16890 Republic of KoreaDepartment of Semiconductor Engineering Gachon University Seongnam Gyeonggi 13120 Republic of KoreaAbstract This work demonstrates the floating gate devices featuring a small molecule‐insulator‐small molecule‐insulator sandwiched structure, where the versatile electrical characteristics can be achieved depending on the thickness of the intermediate parylene tunneling dielectric layer (TDL). For the thin parylene layer of 15 nm (parallel DNTT channel transistor), channel also forms in the lower DNTT layer, allowing hole carriers to tunnel through the parylene TDL. The parallel DNTT channel transistor exhibits electrical characteristics similar to a conventional DNTT transistor with the increased contact resistance due to the presence of the intermediate parylene layer. When the parylene TDL is slightly thicker to be 45 nm, negative differential transconductance followed by current saturation behavior is observed, due to tunneling through the parylene TDL. Finally, photomemory is demonstrated with the sufficiently thick parylene layer (≈80 nm), where hole carriers injected from the electrode cannot tunnel through the parylene TDL, allowing the lower DNTT layer to act as a floating gate for the photogenerated charge carriers. This photomemory shows programmability under the light illumination with the specific wavelength as well as the robust retention and endurance characteristics. Furthermore, the photomemory has been successfully implemented on flexible paper substrates.https://doi.org/10.1002/aelm.202400910current saturationfloating gatenegative transconductanceorganic semiconductorsphotomemory |
| spellingShingle | Dong Hyun Lee Yunchae Jeon Junhwan Choi Hocheon Yoo Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures Advanced Electronic Materials current saturation floating gate negative transconductance organic semiconductors photomemory |
| title | Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures |
| title_full | Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures |
| title_fullStr | Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures |
| title_full_unstemmed | Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures |
| title_short | Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures |
| title_sort | tunneling dielectric thickness dependent behaviors in transistors based on sandwiched small molecule and insulating layer structures |
| topic | current saturation floating gate negative transconductance organic semiconductors photomemory |
| url | https://doi.org/10.1002/aelm.202400910 |
| work_keys_str_mv | AT donghyunlee tunnelingdielectricthicknessdependentbehaviorsintransistorsbasedonsandwichedsmallmoleculeandinsulatinglayerstructures AT yunchaejeon tunnelingdielectricthicknessdependentbehaviorsintransistorsbasedonsandwichedsmallmoleculeandinsulatinglayerstructures AT junhwanchoi tunnelingdielectricthicknessdependentbehaviorsintransistorsbasedonsandwichedsmallmoleculeandinsulatinglayerstructures AT hocheonyoo tunnelingdielectricthicknessdependentbehaviorsintransistorsbasedonsandwichedsmallmoleculeandinsulatinglayerstructures |