Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission
Abstract Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation co...
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Nature Portfolio
2025-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-56557-8 |
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| author | Desui Chen Aleksandr A. Sergeev Nan Zhang Lingyi Ke Ye Wu Bing Tang Chun Ki Tao Haochen Liu Guangruixing Zou Zhaohua Zhu Yidan An Yun Li Arsenii Portniagin Kseniia A. Sergeeva Kam Sing Wong Hin-Lap Yip Andrey L. Rogach |
| author_facet | Desui Chen Aleksandr A. Sergeev Nan Zhang Lingyi Ke Ye Wu Bing Tang Chun Ki Tao Haochen Liu Guangruixing Zou Zhaohua Zhu Yidan An Yun Li Arsenii Portniagin Kseniia A. Sergeeva Kam Sing Wong Hin-Lap Yip Andrey L. Rogach |
| author_sort | Desui Chen |
| collection | DOAJ |
| description | Abstract Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010 cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers. |
| format | Article |
| id | doaj-art-a1b2ef1a184d496ea4e9d535febea28a |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-a1b2ef1a184d496ea4e9d535febea28a2025-08-20T03:02:21ZengNature PortfolioNature Communications2041-17232025-03-011611910.1038/s41467-025-56557-8Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emissionDesui Chen0Aleksandr A. Sergeev1Nan Zhang2Lingyi Ke3Ye Wu4Bing Tang5Chun Ki Tao6Haochen Liu7Guangruixing Zou8Zhaohua Zhu9Yidan An10Yun Li11Arsenii Portniagin12Kseniia A. Sergeeva13Kam Sing Wong14Hin-Lap Yip15Andrey L. Rogach16Department of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Physics, The Hong Kong University of Science and Technology, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Physics, The Hong Kong University of Science and Technology, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Physics, The Hong Kong University of Science and Technology, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonDepartment of Materials Science and Engineering, City University of Hong Kong, KowloonAbstract Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010 cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers.https://doi.org/10.1038/s41467-025-56557-8 |
| spellingShingle | Desui Chen Aleksandr A. Sergeev Nan Zhang Lingyi Ke Ye Wu Bing Tang Chun Ki Tao Haochen Liu Guangruixing Zou Zhaohua Zhu Yidan An Yun Li Arsenii Portniagin Kseniia A. Sergeeva Kam Sing Wong Hin-Lap Yip Andrey L. Rogach Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission Nature Communications |
| title | Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission |
| title_full | Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission |
| title_fullStr | Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission |
| title_full_unstemmed | Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission |
| title_short | Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission |
| title_sort | ultralow trap density fapbbr3 perovskite films for efficient light emitting diodes and amplified spontaneous emission |
| url | https://doi.org/10.1038/s41467-025-56557-8 |
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