Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals

Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their...

Full description

Saved in:
Bibliographic Details
Main Authors: Xiao Tong, Yu Liu, Xiangde Zhu, Hechang Lei, Cedomir Petrovic
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/15/10/737
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1850127083213160448
author Xiao Tong
Yu Liu
Xiangde Zhu
Hechang Lei
Cedomir Petrovic
author_facet Xiao Tong
Yu Liu
Xiangde Zhu
Hechang Lei
Cedomir Petrovic
author_sort Xiao Tong
collection DOAJ
description Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub>, providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe<sub>3</sub>, substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS<sub>2</sub> induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices.
format Article
id doaj-art-a16fa1659b3d4afa9325892ea00022f1
institution OA Journals
issn 2079-4991
language English
publishDate 2025-05-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj-art-a16fa1659b3d4afa9325892ea00022f12025-08-20T02:33:47ZengMDPI AGNanomaterials2079-49912025-05-01151073710.3390/nano15100737Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> CrystalsXiao Tong0Yu Liu1Xiangde Zhu2Hechang Lei3Cedomir Petrovic4Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USACondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USACondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USACondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USACondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USAElectrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub>, providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe<sub>3</sub>, substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS<sub>2</sub> induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices.https://www.mdpi.com/2079-4991/15/10/737electrical transportelectronic structure2D van der Waals interfacescoherent electronic phasesintercalation
spellingShingle Xiao Tong
Yu Liu
Xiangde Zhu
Hechang Lei
Cedomir Petrovic
Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals
Nanomaterials
electrical transport
electronic structure
2D van der Waals interfaces
coherent electronic phases
intercalation
title Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals
title_full Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals
title_fullStr Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals
title_full_unstemmed Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals
title_short Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe<sub>3</sub>, 2H-TaS<sub>2</sub>, and Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> Crystals
title_sort electrical transport interplay with charge density waves magnetization and disorder tuned by 2d van der waals interface modification via elemental intercalation and substitution in zrte sub 3 sub 2h tas sub 2 sub and cr sub 2 sub si sub 2 sub te sub 6 sub crystals
topic electrical transport
electronic structure
2D van der Waals interfaces
coherent electronic phases
intercalation
url https://www.mdpi.com/2079-4991/15/10/737
work_keys_str_mv AT xiaotong electricaltransportinterplaywithchargedensitywavesmagnetizationanddisordertunedby2dvanderwaalsinterfacemodificationviaelementalintercalationandsubstitutioninzrtesub3sub2htassub2subandcrsub2subsisub2subtesub6subcrystals
AT yuliu electricaltransportinterplaywithchargedensitywavesmagnetizationanddisordertunedby2dvanderwaalsinterfacemodificationviaelementalintercalationandsubstitutioninzrtesub3sub2htassub2subandcrsub2subsisub2subtesub6subcrystals
AT xiangdezhu electricaltransportinterplaywithchargedensitywavesmagnetizationanddisordertunedby2dvanderwaalsinterfacemodificationviaelementalintercalationandsubstitutioninzrtesub3sub2htassub2subandcrsub2subsisub2subtesub6subcrystals
AT hechanglei electricaltransportinterplaywithchargedensitywavesmagnetizationanddisordertunedby2dvanderwaalsinterfacemodificationviaelementalintercalationandsubstitutioninzrtesub3sub2htassub2subandcrsub2subsisub2subtesub6subcrystals
AT cedomirpetrovic electricaltransportinterplaywithchargedensitywavesmagnetizationanddisordertunedby2dvanderwaalsinterfacemodificationviaelementalintercalationandsubstitutioninzrtesub3sub2htassub2subandcrsub2subsisub2subtesub6subcrystals