Ellipsometric Analysis of Cadmium Telluride Films’ Structure
Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fa...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/920421 |
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| Summary: | Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fact authenticates the necessity to attract a more complicated model that should include heterogeneity of films. Ellipsometric data calculation within a two-layer film model permitted to conclude that cadmium telluride films have an outer layer that consists of the three-component mixture of CdTe, cavities, and basic matter oxide. Ratio of mixture components depends on the time of deposition, that is, on the film thickness. The inner layer consists of cadmium telluride. |
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| ISSN: | 1687-8434 1687-8442 |