Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study

SiO2 is the most widely used dielectric substrate for graphene devices. Theoretically investigating the interaction between graphene and SiO2 is vitally important for understanding graphene properties and improving device performance. In recent years, density functional theory (DFT) has been used to...

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Main Authors: Runping Zhao, Xia Wang, Lei Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0244791
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_version_ 1832542735203041280
author Runping Zhao
Xia Wang
Lei Wang
author_facet Runping Zhao
Xia Wang
Lei Wang
author_sort Runping Zhao
collection DOAJ
description SiO2 is the most widely used dielectric substrate for graphene devices. Theoretically investigating the interaction between graphene and SiO2 is vitally important for understanding graphene properties and improving device performance. In recent years, density functional theory (DFT) has been used to investigate the graphene–SiO2 interaction in ground states. However, the strong interface dynamics for an excited graphene–SiO2 system in ultrafast nonequilibrium processes was rarely researched. In this work, a real-time time-dependent density functional theory (rt-TDDFT) method was adopted to study the femtosecond laser induced ultrafast structure evolution and the underlying dynamics mechanism of the interface between a single layer graphene and a Si-terminated quartz substrate. This work indicates that rt-TDDFT is a promising method to study the strong electron dynamics and the coupled nuclear dynamics for graphene-SiO2 interfaces under ultrafast optical excitation, which benefits graphene device designs and mechanism analysis.
format Article
id doaj-art-a0cd8f1c5f2a4d72a9369200a94c8126
institution Kabale University
issn 2158-3226
language English
publishDate 2025-01-01
publisher AIP Publishing LLC
record_format Article
series AIP Advances
spelling doaj-art-a0cd8f1c5f2a4d72a9369200a94c81262025-02-03T16:40:42ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015028015028-510.1063/5.0244791Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical studyRunping Zhao0Xia Wang1Lei Wang2College of Mathematics and Physics, Shandong Engineering Research Center of New Optoelectronic Information Technology and Devices, QingDao University of Science and Technology, Qingdao 266061, People’s Republic of ChinaSchool of Physics and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan 250022, Shandong, People’s Republic of ChinaCollege of Mathematics and Physics, Shandong Engineering Research Center of New Optoelectronic Information Technology and Devices, QingDao University of Science and Technology, Qingdao 266061, People’s Republic of ChinaSiO2 is the most widely used dielectric substrate for graphene devices. Theoretically investigating the interaction between graphene and SiO2 is vitally important for understanding graphene properties and improving device performance. In recent years, density functional theory (DFT) has been used to investigate the graphene–SiO2 interaction in ground states. However, the strong interface dynamics for an excited graphene–SiO2 system in ultrafast nonequilibrium processes was rarely researched. In this work, a real-time time-dependent density functional theory (rt-TDDFT) method was adopted to study the femtosecond laser induced ultrafast structure evolution and the underlying dynamics mechanism of the interface between a single layer graphene and a Si-terminated quartz substrate. This work indicates that rt-TDDFT is a promising method to study the strong electron dynamics and the coupled nuclear dynamics for graphene-SiO2 interfaces under ultrafast optical excitation, which benefits graphene device designs and mechanism analysis.http://dx.doi.org/10.1063/5.0244791
spellingShingle Runping Zhao
Xia Wang
Lei Wang
Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study
AIP Advances
title Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study
title_full Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study
title_fullStr Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study
title_full_unstemmed Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study
title_short Femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate: A theoretical study
title_sort femtosecond laser induced ultrafast interface dynamics between single layer graphene and quartz substrate a theoretical study
url http://dx.doi.org/10.1063/5.0244791
work_keys_str_mv AT runpingzhao femtosecondlaserinducedultrafastinterfacedynamicsbetweensinglelayergrapheneandquartzsubstrateatheoreticalstudy
AT xiawang femtosecondlaserinducedultrafastinterfacedynamicsbetweensinglelayergrapheneandquartzsubstrateatheoreticalstudy
AT leiwang femtosecondlaserinducedultrafastinterfacedynamicsbetweensinglelayergrapheneandquartzsubstrateatheoreticalstudy