Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers
We propose and investigate a silicon photonic TE-pass polarizer consisting of alternating layers made out of copper/silicon nitride (Cu/Si<sub>3</sub>N<sub>4</sub>). Based on a Si stripe waveguide, the launched dominant fundamental TE mode can normally p...
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IEEE
2017-01-01
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| author | Lei Chen Han Ye Yumin Liu Dong Wu Rui Ma Zhongyuan Yu |
| author_facet | Lei Chen Han Ye Yumin Liu Dong Wu Rui Ma Zhongyuan Yu |
| author_sort | Lei Chen |
| collection | DOAJ |
| description | We propose and investigate a silicon photonic TE-pass polarizer consisting of alternating layers made out of copper/silicon nitride (Cu/Si<sub>3</sub>N<sub>4</sub>). Based on a Si stripe waveguide, the launched dominant fundamental TE mode can normally pass through it with little influence, whereas the unwanted fundamental TM mode ends up in nearly zero output as it is gradually coupled into a plasmonic mode. Particularly, the polarizer with wedge-shaped Cu/Si<sub>3</sub>N<sub>4</sub> structure can achieve extremely high extinction ratio (ER) of 52.34 dB and low insertion loss of 0.35 dB within an ultracompact device length of 2 <italic>μ </italic>m. It also presents a relatively wide operating bandwidth of 61 nm maintaining ER >20 dB. Furthermore, considering Si<sub>3</sub>N<sub>4</sub> itself a good Cu<sup>2+</sup> ion diffusion barrier and its good adhesion to copper, the device fabrication is reasonably practicable using complementary metal–oxide semiconductor (CMOS)-compatible technologies. Last but not the least, we first present and analyze the connection between mode property and device performance, which could provide a significant step forward for establishing and improving the polarization diversity systems of great importance in nanophotonic integrated circuits. |
| format | Article |
| id | doaj-art-a074977a136d4d3e9303a8e9972f716a |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-a074977a136d4d3e9303a8e9972f716a2025-08-20T03:14:52ZengIEEEIEEE Photonics Journal1943-06552017-01-01921910.1109/JPHOT.2017.26797637882661Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride LayersLei Chen0Han Ye1Yumin Liu2Dong Wu3Rui Ma4Zhongyuan Yu5State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, ChinaWe propose and investigate a silicon photonic TE-pass polarizer consisting of alternating layers made out of copper/silicon nitride (Cu/Si<sub>3</sub>N<sub>4</sub>). Based on a Si stripe waveguide, the launched dominant fundamental TE mode can normally pass through it with little influence, whereas the unwanted fundamental TM mode ends up in nearly zero output as it is gradually coupled into a plasmonic mode. Particularly, the polarizer with wedge-shaped Cu/Si<sub>3</sub>N<sub>4</sub> structure can achieve extremely high extinction ratio (ER) of 52.34 dB and low insertion loss of 0.35 dB within an ultracompact device length of 2 <italic>μ </italic>m. It also presents a relatively wide operating bandwidth of 61 nm maintaining ER >20 dB. Furthermore, considering Si<sub>3</sub>N<sub>4</sub> itself a good Cu<sup>2+</sup> ion diffusion barrier and its good adhesion to copper, the device fabrication is reasonably practicable using complementary metal–oxide semiconductor (CMOS)-compatible technologies. Last but not the least, we first present and analyze the connection between mode property and device performance, which could provide a significant step forward for establishing and improving the polarization diversity systems of great importance in nanophotonic integrated circuits.https://ieeexplore.ieee.org/document/7882661/Plasmonicssubwavelength structuressilicon nanophotonicswaveguide devices. |
| spellingShingle | Lei Chen Han Ye Yumin Liu Dong Wu Rui Ma Zhongyuan Yu Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers IEEE Photonics Journal Plasmonics subwavelength structures silicon nanophotonics waveguide devices. |
| title | Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers |
| title_full | Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers |
| title_fullStr | Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers |
| title_full_unstemmed | Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers |
| title_short | Numerical Investigations of a Silicon Photonic TE-Pass Polarizer Consisting of Alternating Copper/Silicon Nitride Layers |
| title_sort | numerical investigations of a silicon photonic te pass polarizer consisting of alternating copper silicon nitride layers |
| topic | Plasmonics subwavelength structures silicon nanophotonics waveguide devices. |
| url | https://ieeexplore.ieee.org/document/7882661/ |
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