Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor
Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-06-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02044.pdf |
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