APA (7th ed.) Citation

I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, & A.S. Kurochka. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor. Sumy State University.

Chicago Style (17th ed.) Citation

I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, and A.S. Kurochka. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor. Sumy State University.

MLA (9th ed.) Citation

I.A. Rogachev, et al. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor. Sumy State University.