Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities...

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Bibliographic Details
Main Authors: Ryota Akaike, Kenjiro Uesugi, Kohei Shima, Shigefusa F. Chichibu, Akira Uedono, Takao Nakamura, Hideto Miyake
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
face-to-face annealed sputter-deposited AlN
quantum well
photoluminescence
AlGaN
positron annihilation
time resolved photoluminescence
Online Access:https://doi.org/10.35848/1882-0786/ade2b7
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