Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications
Abstract A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high-temperature applications. This study addr...
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Springer
2025-06-01
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| Series: | Discover Electronics |
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| Online Access: | https://doi.org/10.1007/s44291-025-00073-y |
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| author | Sana Nasir Gul Hassan Habib Ahmad |
| author_facet | Sana Nasir Gul Hassan Habib Ahmad |
| author_sort | Sana Nasir |
| collection | DOAJ |
| description | Abstract A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high-temperature applications. This study addresses a gap in the existing research by systematically examining the impact of inter-p + spacing over a wide range, providing critical insights for practical designs and applications. The optimal Junction Barrier Schottky spacing was identified as 1–1.3 μm for fully Gallium Nitride-based diodes and 1.1–1.4 μm for Aluminum Nitride/Gallium Nitride diodes, revealing significant improvements over standard designs. For an intrinsic layer thickness of 0.5 µm, the best trade-off between specific on-resistance and breakdown voltage is achieved at 1.2 μm spacing for Gallium Nitride-based diodes, yielding a specific on-resistance of 9.93 × 10−3 mΩ cm2, a breakdown voltage of 185.72 V, a critical electric field of 3.75 MV/cm, and a Baliga’s Figure of Merit of 3.47 GW/cm2. While Aluminum Nitride/Gallium Nitride diodes at 1.4 μm spacing achieve optimal performance with a specific on-resistance of 3.63 × 10−3 mΩ cm2, a breakdown voltage of 156.98 V, a critical electric field of 4.32 MV/cm, and a Baliga’s Figure of Merit of 6.78 GW/cm2. This research demonstrates the superior performance of Junction Barrier Schottky diodes compared to PiN diodes under forward bias and Schottky diodes under reverse bias conditions. Notably, the Aluminum Nitride/Gallium Nitride diodes exhibit an unprecedented Baliga’s Figure of Merit, setting a new benchmark in the field. These findings pave the way for the next generation of high-efficiency, high-reliability power devices by demonstrating the transformative potential of optimized inter-p + spacings in Junction Barrier Schottky diode design. |
| format | Article |
| id | doaj-art-9f7d53d71f924f91aeaa74379571738e |
| institution | OA Journals |
| issn | 2948-1600 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Electronics |
| spelling | doaj-art-9f7d53d71f924f91aeaa74379571738e2025-08-20T02:05:45ZengSpringerDiscover Electronics2948-16002025-06-012111310.1007/s44291-025-00073-yComprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applicationsSana Nasir0Gul Hassan1Habib Ahmad2Centre for Advanced Electronics & Photovoltaic Engineering, IIU IslamabadCentre for Advanced Electronics & Photovoltaic Engineering, IIU IslamabadCentre for Advanced Electronics & Photovoltaic Engineering, IIU IslamabadAbstract A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high-temperature applications. This study addresses a gap in the existing research by systematically examining the impact of inter-p + spacing over a wide range, providing critical insights for practical designs and applications. The optimal Junction Barrier Schottky spacing was identified as 1–1.3 μm for fully Gallium Nitride-based diodes and 1.1–1.4 μm for Aluminum Nitride/Gallium Nitride diodes, revealing significant improvements over standard designs. For an intrinsic layer thickness of 0.5 µm, the best trade-off between specific on-resistance and breakdown voltage is achieved at 1.2 μm spacing for Gallium Nitride-based diodes, yielding a specific on-resistance of 9.93 × 10−3 mΩ cm2, a breakdown voltage of 185.72 V, a critical electric field of 3.75 MV/cm, and a Baliga’s Figure of Merit of 3.47 GW/cm2. While Aluminum Nitride/Gallium Nitride diodes at 1.4 μm spacing achieve optimal performance with a specific on-resistance of 3.63 × 10−3 mΩ cm2, a breakdown voltage of 156.98 V, a critical electric field of 4.32 MV/cm, and a Baliga’s Figure of Merit of 6.78 GW/cm2. This research demonstrates the superior performance of Junction Barrier Schottky diodes compared to PiN diodes under forward bias and Schottky diodes under reverse bias conditions. Notably, the Aluminum Nitride/Gallium Nitride diodes exhibit an unprecedented Baliga’s Figure of Merit, setting a new benchmark in the field. These findings pave the way for the next generation of high-efficiency, high-reliability power devices by demonstrating the transformative potential of optimized inter-p + spacings in Junction Barrier Schottky diode design.https://doi.org/10.1007/s44291-025-00073-yGallium nitrideJunction barrier Schottky diodesPiN diodesSchottky barrier diodesAluminum nitrideVertical power devices |
| spellingShingle | Sana Nasir Gul Hassan Habib Ahmad Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications Discover Electronics Gallium nitride Junction barrier Schottky diodes PiN diodes Schottky barrier diodes Aluminum nitride Vertical power devices |
| title | Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications |
| title_full | Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications |
| title_fullStr | Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications |
| title_full_unstemmed | Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications |
| title_short | Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications |
| title_sort | comprehensive investigation of gan and aln on gan jbs diodes optimizing inter p spacing for high power applications |
| topic | Gallium nitride Junction barrier Schottky diodes PiN diodes Schottky barrier diodes Aluminum nitride Vertical power devices |
| url | https://doi.org/10.1007/s44291-025-00073-y |
| work_keys_str_mv | AT sananasir comprehensiveinvestigationofganandalnonganjbsdiodesoptimizinginterpspacingforhighpowerapplications AT gulhassan comprehensiveinvestigationofganandalnonganjbsdiodesoptimizinginterpspacingforhighpowerapplications AT habibahmad comprehensiveinvestigationofganandalnonganjbsdiodesoptimizinginterpspacingforhighpowerapplications |