Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The par...

Full description

Saved in:
Bibliographic Details
Main Authors: Stanislav Tikhov, Oleg Gorshkov, Ivan Antonov, Alexander Morozov, Maria Koryazhkina, Dmitry Filatov
Format: Article
Language:English
Published: Wiley 2018-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2018/2028491
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items