Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory
We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The par...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/2028491 |
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| author | Stanislav Tikhov Oleg Gorshkov Ivan Antonov Alexander Morozov Maria Koryazhkina Dmitry Filatov |
| author_facet | Stanislav Tikhov Oleg Gorshkov Ivan Antonov Alexander Morozov Maria Koryazhkina Dmitry Filatov |
| author_sort | Stanislav Tikhov |
| collection | DOAJ |
| description | We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K. These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications. |
| format | Article |
| id | doaj-art-9f6097224eb54e17901f27cf3eee200c |
| institution | OA Journals |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-9f6097224eb54e17901f27cf3eee200c2025-08-20T02:20:51ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/20284912028491Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive MemoryStanislav Tikhov0Oleg Gorshkov1Ivan Antonov2Alexander Morozov3Maria Koryazhkina4Dmitry Filatov5Department of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, RussiaResearch Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, RussiaResearch Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, RussiaDepartment of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, RussiaResearch Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, RussiaResearch and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, RussiaWe report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K. These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications.http://dx.doi.org/10.1155/2018/2028491 |
| spellingShingle | Stanislav Tikhov Oleg Gorshkov Ivan Antonov Alexander Morozov Maria Koryazhkina Dmitry Filatov Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory Advances in Condensed Matter Physics |
| title | Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory |
| title_full | Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory |
| title_fullStr | Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory |
| title_full_unstemmed | Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory |
| title_short | Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory |
| title_sort | ion migration polarization in the yttria stabilized zirconia based metal oxide metal and metal oxide semiconductor stacks for resistive memory |
| url | http://dx.doi.org/10.1155/2018/2028491 |
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