APA (7th ed.) Citation

Tikhov, S., Gorshkov, O., Antonov, I., Morozov, A., Koryazhkina, M., & Filatov, D. Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory. Wiley.

Chicago Style (17th ed.) Citation

Tikhov, Stanislav, Oleg Gorshkov, Ivan Antonov, Alexander Morozov, Maria Koryazhkina, and Dmitry Filatov. Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory. Wiley.

MLA (9th ed.) Citation

Tikhov, Stanislav, et al. Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory. Wiley.