The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
In this study, optimization of the blocking layer (BL) TiO2 coating using radio frequency (RF) sputtering has been carried out to improve the performance of dye-sensitive solar cell (DSSC). The TiO2 blocking layer was created with variations in sputtering power (0, 140, and 180 W). Based on the resu...
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| Format: | Article |
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Elsevier
2025-01-01
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| Series: | Results in Surfaces and Interfaces |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666845925000431 |
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| author | Alfiatul Ma'arifah Nabella Sholeha Herlin Pujiarti Markus Diantoro Arif Hidayat Zurina Osman |
| author_facet | Alfiatul Ma'arifah Nabella Sholeha Herlin Pujiarti Markus Diantoro Arif Hidayat Zurina Osman |
| author_sort | Alfiatul Ma'arifah |
| collection | DOAJ |
| description | In this study, optimization of the blocking layer (BL) TiO2 coating using radio frequency (RF) sputtering has been carried out to improve the performance of dye-sensitive solar cell (DSSC). The TiO2 blocking layer was created with variations in sputtering power (0, 140, and 180 W). Based on the results of x-ray diffraction (XRD) characterization, it shows that as the sputtering power increases, the crystal size decreases, thereby increasing the active surface area. The ultraviolet–visible (UV–Vis) results indicate that an increase in sputtering power can reduce the band gap from 3.83 eV to 4.04 eV. In this study, an increase in DSSC efficiency was obtained from 3.23% to 7.71%. This improvement in efficiency shows that the sputtered TiO2 blocking layer can reduce recombination, as evidenced by the increased electron lifetime. This is further supported by the electrochemical impedance spectroscoy (EIS) results, which show that the use of the sputtered TiO2 blocking layer increases the electron lifetime from 0.70 ms to 8.96 ms. |
| format | Article |
| id | doaj-art-9f507d70aa5542f28bdebbec737523da |
| institution | OA Journals |
| issn | 2666-8459 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Surfaces and Interfaces |
| spelling | doaj-art-9f507d70aa5542f28bdebbec737523da2025-08-20T02:06:19ZengElsevierResults in Surfaces and Interfaces2666-84592025-01-011810045610.1016/j.rsurfi.2025.100456The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSCAlfiatul Ma'arifah0Nabella Sholeha1Herlin Pujiarti2Markus Diantoro3Arif Hidayat4Zurina Osman5Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, IndonesiaResearch Center for Nanoscience and Nanotechnology (RCNN), Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia; Center of Advanced Materials and Renewable Energy, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia; Corresponding author. Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia.Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia; Center of Advanced Materials and Renewable Energy, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, IndonesiaCenter for Ionics Universiti Malaya, Department of Physics, Universiti Malaya, 50603, Kuala Lumpur, MalaysiaIn this study, optimization of the blocking layer (BL) TiO2 coating using radio frequency (RF) sputtering has been carried out to improve the performance of dye-sensitive solar cell (DSSC). The TiO2 blocking layer was created with variations in sputtering power (0, 140, and 180 W). Based on the results of x-ray diffraction (XRD) characterization, it shows that as the sputtering power increases, the crystal size decreases, thereby increasing the active surface area. The ultraviolet–visible (UV–Vis) results indicate that an increase in sputtering power can reduce the band gap from 3.83 eV to 4.04 eV. In this study, an increase in DSSC efficiency was obtained from 3.23% to 7.71%. This improvement in efficiency shows that the sputtered TiO2 blocking layer can reduce recombination, as evidenced by the increased electron lifetime. This is further supported by the electrochemical impedance spectroscoy (EIS) results, which show that the use of the sputtered TiO2 blocking layer increases the electron lifetime from 0.70 ms to 8.96 ms.http://www.sciencedirect.com/science/article/pii/S2666845925000431DSSCBlocking layerTiO2RF sputteringDSSC performance |
| spellingShingle | Alfiatul Ma'arifah Nabella Sholeha Herlin Pujiarti Markus Diantoro Arif Hidayat Zurina Osman The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC Results in Surfaces and Interfaces DSSC Blocking layer TiO2 RF sputtering DSSC performance |
| title | The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC |
| title_full | The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC |
| title_fullStr | The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC |
| title_full_unstemmed | The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC |
| title_short | The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC |
| title_sort | effect of rf sputtering power variation on blocking layer tio2 on the performance of dssc |
| topic | DSSC Blocking layer TiO2 RF sputtering DSSC performance |
| url | http://www.sciencedirect.com/science/article/pii/S2666845925000431 |
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