The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC

In this study, optimization of the blocking layer (BL) TiO2 coating using radio frequency (RF) sputtering has been carried out to improve the performance of dye-sensitive solar cell (DSSC). The TiO2 blocking layer was created with variations in sputtering power (0, 140, and 180 W). Based on the resu...

Full description

Saved in:
Bibliographic Details
Main Authors: Alfiatul Ma'arifah, Nabella Sholeha, Herlin Pujiarti, Markus Diantoro, Arif Hidayat, Zurina Osman
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Results in Surfaces and Interfaces
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2666845925000431
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1850222504268791808
author Alfiatul Ma'arifah
Nabella Sholeha
Herlin Pujiarti
Markus Diantoro
Arif Hidayat
Zurina Osman
author_facet Alfiatul Ma'arifah
Nabella Sholeha
Herlin Pujiarti
Markus Diantoro
Arif Hidayat
Zurina Osman
author_sort Alfiatul Ma'arifah
collection DOAJ
description In this study, optimization of the blocking layer (BL) TiO2 coating using radio frequency (RF) sputtering has been carried out to improve the performance of dye-sensitive solar cell (DSSC). The TiO2 blocking layer was created with variations in sputtering power (0, 140, and 180 W). Based on the results of x-ray diffraction (XRD) characterization, it shows that as the sputtering power increases, the crystal size decreases, thereby increasing the active surface area. The ultraviolet–visible (UV–Vis) results indicate that an increase in sputtering power can reduce the band gap from 3.83 eV to 4.04 eV. In this study, an increase in DSSC efficiency was obtained from 3.23% to 7.71%. This improvement in efficiency shows that the sputtered TiO2 blocking layer can reduce recombination, as evidenced by the increased electron lifetime. This is further supported by the electrochemical impedance spectroscoy (EIS) results, which show that the use of the sputtered TiO2 blocking layer increases the electron lifetime from 0.70 ms to 8.96 ms.
format Article
id doaj-art-9f507d70aa5542f28bdebbec737523da
institution OA Journals
issn 2666-8459
language English
publishDate 2025-01-01
publisher Elsevier
record_format Article
series Results in Surfaces and Interfaces
spelling doaj-art-9f507d70aa5542f28bdebbec737523da2025-08-20T02:06:19ZengElsevierResults in Surfaces and Interfaces2666-84592025-01-011810045610.1016/j.rsurfi.2025.100456The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSCAlfiatul Ma'arifah0Nabella Sholeha1Herlin Pujiarti2Markus Diantoro3Arif Hidayat4Zurina Osman5Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, IndonesiaResearch Center for Nanoscience and Nanotechnology (RCNN), Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia; Center of Advanced Materials and Renewable Energy, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia; Corresponding author. Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia.Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, Indonesia; Center of Advanced Materials and Renewable Energy, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, IndonesiaDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang No. 5, Malang, 65145, IndonesiaCenter for Ionics Universiti Malaya, Department of Physics, Universiti Malaya, 50603, Kuala Lumpur, MalaysiaIn this study, optimization of the blocking layer (BL) TiO2 coating using radio frequency (RF) sputtering has been carried out to improve the performance of dye-sensitive solar cell (DSSC). The TiO2 blocking layer was created with variations in sputtering power (0, 140, and 180 W). Based on the results of x-ray diffraction (XRD) characterization, it shows that as the sputtering power increases, the crystal size decreases, thereby increasing the active surface area. The ultraviolet–visible (UV–Vis) results indicate that an increase in sputtering power can reduce the band gap from 3.83 eV to 4.04 eV. In this study, an increase in DSSC efficiency was obtained from 3.23% to 7.71%. This improvement in efficiency shows that the sputtered TiO2 blocking layer can reduce recombination, as evidenced by the increased electron lifetime. This is further supported by the electrochemical impedance spectroscoy (EIS) results, which show that the use of the sputtered TiO2 blocking layer increases the electron lifetime from 0.70 ms to 8.96 ms.http://www.sciencedirect.com/science/article/pii/S2666845925000431DSSCBlocking layerTiO2RF sputteringDSSC performance
spellingShingle Alfiatul Ma'arifah
Nabella Sholeha
Herlin Pujiarti
Markus Diantoro
Arif Hidayat
Zurina Osman
The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
Results in Surfaces and Interfaces
DSSC
Blocking layer
TiO2
RF sputtering
DSSC performance
title The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
title_full The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
title_fullStr The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
title_full_unstemmed The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
title_short The effect of RF sputtering power variation on blocking layer TiO2 on the performance of DSSC
title_sort effect of rf sputtering power variation on blocking layer tio2 on the performance of dssc
topic DSSC
Blocking layer
TiO2
RF sputtering
DSSC performance
url http://www.sciencedirect.com/science/article/pii/S2666845925000431
work_keys_str_mv AT alfiatulmaarifah theeffectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT nabellasholeha theeffectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT herlinpujiarti theeffectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT markusdiantoro theeffectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT arifhidayat theeffectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT zurinaosman theeffectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT alfiatulmaarifah effectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT nabellasholeha effectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT herlinpujiarti effectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT markusdiantoro effectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT arifhidayat effectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc
AT zurinaosman effectofrfsputteringpowervariationonblockinglayertio2ontheperformanceofdssc