A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>
In this study, we propose an optimized shield gate trench 4H-SiC structure with effective gate oxide protection. The proposed device has a split trench with a P+ shield region, and the P+ shield is grounded by the middle deep trench. Our simulation results show that the peak electric field near the...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/4/447 |
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