A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>
In this study, we propose an optimized shield gate trench 4H-SiC structure with effective gate oxide protection. The proposed device has a split trench with a P+ shield region, and the P+ shield is grounded by the middle deep trench. Our simulation results show that the peak electric field near the...
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MDPI AG
2025-04-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/4/447 |
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| author | Wenrong Cui Jianbin Guo Hang Xu David Wei Zhang |
| author_facet | Wenrong Cui Jianbin Guo Hang Xu David Wei Zhang |
| author_sort | Wenrong Cui |
| collection | DOAJ |
| description | In this study, we propose an optimized shield gate trench 4H-SiC structure with effective gate oxide protection. The proposed device has a split trench with a P+ shield region, and the P+ shield is grounded by the middle deep trench. Our simulation results show that the peak electric field near the gate oxide is almost completely suppressed. Compared with a conventional P+ shield device, our proposed structure achieves a 78% reduction in the Q<sub>gd</sub> and a 108% increase in the FoM (figure of merit) simultaneously. Additionally, it is estimated that the device cell pitch can be reduced to 1.8 μm with a R<sub>on</sub> below 0.94 mΩ·cm<sup>2</sup>, in theory. These demonstrated device performance metrics, as well as its simple structure and good compatibility, make our proposed SiC MOSFET highly attractive for future high-performance applications. |
| format | Article |
| id | doaj-art-9f4ace2f4145426e9e04026858f3f3b6 |
| institution | OA Journals |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
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| series | Micromachines |
| spelling | doaj-art-9f4ace2f4145426e9e04026858f3f3b62025-08-20T02:28:27ZengMDPI AGMicromachines2072-666X2025-04-0116444710.3390/mi16040447A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>Wenrong Cui0Jianbin Guo1Hang Xu2David Wei Zhang3School of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaIn this study, we propose an optimized shield gate trench 4H-SiC structure with effective gate oxide protection. The proposed device has a split trench with a P+ shield region, and the P+ shield is grounded by the middle deep trench. Our simulation results show that the peak electric field near the gate oxide is almost completely suppressed. Compared with a conventional P+ shield device, our proposed structure achieves a 78% reduction in the Q<sub>gd</sub> and a 108% increase in the FoM (figure of merit) simultaneously. Additionally, it is estimated that the device cell pitch can be reduced to 1.8 μm with a R<sub>on</sub> below 0.94 mΩ·cm<sup>2</sup>, in theory. These demonstrated device performance metrics, as well as its simple structure and good compatibility, make our proposed SiC MOSFET highly attractive for future high-performance applications.https://www.mdpi.com/2072-666X/16/4/447SiChigh densitygate oxide protectiondistributed grounding |
| spellingShingle | Wenrong Cui Jianbin Guo Hang Xu David Wei Zhang A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub> Micromachines SiC high density gate oxide protection distributed grounding |
| title | A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub> |
| title_full | A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub> |
| title_fullStr | A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub> |
| title_full_unstemmed | A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub> |
| title_short | A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub> |
| title_sort | high density 4h sic mosfet based on a buried field limiting ring with low q sub gd sub and r sub on sub |
| topic | SiC high density gate oxide protection distributed grounding |
| url | https://www.mdpi.com/2072-666X/16/4/447 |
| work_keys_str_mv | AT wenrongcui ahighdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT jianbinguo ahighdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT hangxu ahighdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT davidweizhang ahighdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT wenrongcui highdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT jianbinguo highdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT hangxu highdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub AT davidweizhang highdensity4hsicmosfetbasedonaburiedfieldlimitingringwithlowqsubgdsubandrsubonsub |