Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences
The influence of ultrasound introduced into the melt during the growth of single crystals of gallium arsenide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0.1-0.2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-07-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03043.pdf |
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| Summary: | The influence of ultrasound introduced into the melt during the growth of single crystals of gallium arsenide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0.1-0.2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the dislocation structure of single crystals. In the simulation result of the ultrasonic wave interaction with the melt in the crucible on the basis of the theory of formation of phases is established that nucleation rate associated with the frequency and amplitude of the ultrasonic vibration acting on the melt. |
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| ISSN: | 2077-6772 |