Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance

Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance

This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation det...

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Main Authors: Francesca Peverini, Saba Aziz, Aishah Bashiri, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Carlo Calcatelli, Daniela Calvo, Silvia Caponi, Mirco Caprai, Domenico Caputo, Anna Paola Caricato, Roberto Catalano, Roberto Cirro, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Tommaso Croci, Giacomo Cuttone, Gianpiero de Cesare, Paolo De Remigis, Sylvain Dunand, Michele Fabi, Luca Frontini, Livio Fanò, Benedetta Gianfelici, Catia Grimani, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Pisana Placidi, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Federico Sabbatini, Andrea Scorzoni, Leonello Servoli, Alberto Stabile, Silvia Tacchi, Cinzia Talamonti, Jonathan Thomet, Luca Tosti, Giovanni Verzellesi, Mattia Villani, Richard James Wheadon, Nicolas Wyrsch, Nicola Zema, Maddalena Pedio
Format: Article
Language:English
Published: MDPI AG 2024-09-01
Series:Nanomaterials
Subjects:
amorphous hydrogenated silicon
photoemission
inverse photoemission
flexible substrate
radiation detector
Raman
Online Access:https://www.mdpi.com/2079-4991/14/19/1551
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