Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation det...
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2024-09-01
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| author | Francesca Peverini Saba Aziz Aishah Bashiri Marco Bizzarri Maurizio Boscardin Lucio Calcagnile Carlo Calcatelli Daniela Calvo Silvia Caponi Mirco Caprai Domenico Caputo Anna Paola Caricato Roberto Catalano Roberto Cirro Giuseppe Antonio Pablo Cirrone Michele Crivellari Tommaso Croci Giacomo Cuttone Gianpiero de Cesare Paolo De Remigis Sylvain Dunand Michele Fabi Luca Frontini Livio Fanò Benedetta Gianfelici Catia Grimani Omar Hammad Maria Ionica Keida Kanxheri Matthew Large Francesca Lenta Valentino Liberali Nicola Lovecchio Maurizio Martino Giuseppe Maruccio Giovanni Mazza Mauro Menichelli Anna Grazia Monteduro Francesco Moscatelli Arianna Morozzi Augusto Nascetti Stefania Pallotta Andrea Papi Daniele Passeri Marco Petasecca Giada Petringa Igor Pis Pisana Placidi Gianluca Quarta Silvia Rizzato Alessandro Rossi Giulia Rossi Federico Sabbatini Andrea Scorzoni Leonello Servoli Alberto Stabile Silvia Tacchi Cinzia Talamonti Jonathan Thomet Luca Tosti Giovanni Verzellesi Mattia Villani Richard James Wheadon Nicolas Wyrsch Nicola Zema Maddalena Pedio |
| author_facet | Francesca Peverini Saba Aziz Aishah Bashiri Marco Bizzarri Maurizio Boscardin Lucio Calcagnile Carlo Calcatelli Daniela Calvo Silvia Caponi Mirco Caprai Domenico Caputo Anna Paola Caricato Roberto Catalano Roberto Cirro Giuseppe Antonio Pablo Cirrone Michele Crivellari Tommaso Croci Giacomo Cuttone Gianpiero de Cesare Paolo De Remigis Sylvain Dunand Michele Fabi Luca Frontini Livio Fanò Benedetta Gianfelici Catia Grimani Omar Hammad Maria Ionica Keida Kanxheri Matthew Large Francesca Lenta Valentino Liberali Nicola Lovecchio Maurizio Martino Giuseppe Maruccio Giovanni Mazza Mauro Menichelli Anna Grazia Monteduro Francesco Moscatelli Arianna Morozzi Augusto Nascetti Stefania Pallotta Andrea Papi Daniele Passeri Marco Petasecca Giada Petringa Igor Pis Pisana Placidi Gianluca Quarta Silvia Rizzato Alessandro Rossi Giulia Rossi Federico Sabbatini Andrea Scorzoni Leonello Servoli Alberto Stabile Silvia Tacchi Cinzia Talamonti Jonathan Thomet Luca Tosti Giovanni Verzellesi Mattia Villani Richard James Wheadon Nicolas Wyrsch Nicola Zema Maddalena Pedio |
| author_sort | Francesca Peverini |
| collection | DOAJ |
| description | This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses. |
| format | Article |
| id | doaj-art-9eaf62f36ee14b0dbd1b62f224c8c9ad |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2024-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-9eaf62f36ee14b0dbd1b62f224c8c9ad2025-08-20T02:16:55ZengMDPI AGNanomaterials2079-49912024-09-011419155110.3390/nano14191551Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical PerformanceFrancesca Peverini0Saba Aziz1Aishah Bashiri2Marco Bizzarri3Maurizio Boscardin4Lucio Calcagnile5Carlo Calcatelli6Daniela Calvo7Silvia Caponi8Mirco Caprai9Domenico Caputo10Anna Paola Caricato11Roberto Catalano12Roberto Cirro13Giuseppe Antonio Pablo Cirrone14Michele Crivellari15Tommaso Croci16Giacomo Cuttone17Gianpiero de Cesare18Paolo De Remigis19Sylvain Dunand20Michele Fabi21Luca Frontini22Livio Fanò23Benedetta Gianfelici24Catia Grimani25Omar Hammad26Maria Ionica27Keida Kanxheri28Matthew Large29Francesca Lenta30Valentino Liberali31Nicola Lovecchio32Maurizio Martino33Giuseppe Maruccio34Giovanni Mazza35Mauro Menichelli36Anna Grazia Monteduro37Francesco Moscatelli38Arianna Morozzi39Augusto Nascetti40Stefania Pallotta41Andrea Papi42Daniele Passeri43Marco Petasecca44Giada Petringa45Igor Pis46Pisana Placidi47Gianluca Quarta48Silvia Rizzato49Alessandro Rossi50Giulia Rossi51Federico Sabbatini52Andrea Scorzoni53Leonello Servoli54Alberto Stabile55Silvia Tacchi56Cinzia Talamonti57Jonathan Thomet58Luca Tosti59Giovanni Verzellesi60Mattia Villani61Richard James Wheadon62Nicolas Wyrsch63Nicola Zema64Maddalena Pedio65Istituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyNajran University, King Abdulaziz Road, Najran P.O. Box 1988, Saudi ArabiaNajran University, King Abdulaziz Road, Najran P.O. Box 1988, Saudi ArabiaIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN, TIPFA Via Sommarive 14, 38123 Povo, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyDipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN Sezione di Torino, Via Pietro Giuria 1, 10125 Torino, ItalyCNR—Istituto Officina dei Materiali, Università degli Studi di Perugia, Via A. Pascoli, 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN Sezione di Roma 1, Piazzale Aldo Moro 2, 00185 Rome, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyINFN Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, ItalyINFN Sezione di Torino, Via Pietro Giuria 1, 10125 Torino, ItalyINFN Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, ItalyFondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN Sezione di Torino, Via Pietro Giuria 1, 10125 Torino, ItalyEcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Mal-adière 71b, 2000 Neuchâtel, SwitzerlandDiSPeA, Università di Urbino Carlo Bo, 61029 Urbino, ItalyINFN and Dipartimento di Fisica, Università degli studi di Milano, Via Celoria 16, 20133 Milan, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyDiSPeA, Università di Urbino Carlo Bo, 61029 Urbino, ItalyFondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyCentre for Medical Radiation Physics, University of Wollongong, Northfields Ave., Wollongong, NSW 2522, AustraliaINFN Sezione di Torino, Via Pietro Giuria 1, 10125 Torino, ItalyINFN and Dipartimento di Fisica, Università degli studi di Milano, Via Celoria 16, 20133 Milan, ItalyINFN Sezione di Roma 1, Piazzale Aldo Moro 2, 00185 Rome, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyINFN Sezione di Torino, Via Pietro Giuria 1, 10125 Torino, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN Sezione di Roma 1, Piazzale Aldo Moro 2, 00185 Rome, ItalyINFN Sezione di Firenze, Via Sansone 1, 50019 Sesto Fiorentino, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyCentre for Medical Radiation Physics, University of Wollongong, Northfields Ave., Wollongong, NSW 2522, AustraliaINFN Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, ItalyCNR, Istituto Officina dei Materiali (IOM), S.S. 14 km 163.5, 34149 Trieste, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyINFN and Dipartimento di Fisica e Matematica, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyDiSPeA, Università di Urbino Carlo Bo, 61029 Urbino, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN and Dipartimento di Fisica, Università degli studi di Milano, Via Celoria 16, 20133 Milan, ItalyCNR—Istituto Officina dei Materiali, Università degli Studi di Perugia, Via A. Pascoli, 06123 Perugia, ItalyINFN Sezione di Firenze, Via Sansone 1, 50019 Sesto Fiorentino, ItalyEcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Mal-adière 71b, 2000 Neuchâtel, SwitzerlandIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyINFN, TIPFA Via Sommarive 14, 38123 Povo, ItalyDiSPeA, Università di Urbino Carlo Bo, 61029 Urbino, ItalyINFN Sezione di Torino, Via Pietro Giuria 1, 10125 Torino, ItalyEcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Mal-adière 71b, 2000 Neuchâtel, SwitzerlandIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyIstituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, ItalyThis paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses.https://www.mdpi.com/2079-4991/14/19/1551amorphous hydrogenated siliconphotoemissioninverse photoemissionflexible substrateradiation detectorRaman |
| spellingShingle | Francesca Peverini Saba Aziz Aishah Bashiri Marco Bizzarri Maurizio Boscardin Lucio Calcagnile Carlo Calcatelli Daniela Calvo Silvia Caponi Mirco Caprai Domenico Caputo Anna Paola Caricato Roberto Catalano Roberto Cirro Giuseppe Antonio Pablo Cirrone Michele Crivellari Tommaso Croci Giacomo Cuttone Gianpiero de Cesare Paolo De Remigis Sylvain Dunand Michele Fabi Luca Frontini Livio Fanò Benedetta Gianfelici Catia Grimani Omar Hammad Maria Ionica Keida Kanxheri Matthew Large Francesca Lenta Valentino Liberali Nicola Lovecchio Maurizio Martino Giuseppe Maruccio Giovanni Mazza Mauro Menichelli Anna Grazia Monteduro Francesco Moscatelli Arianna Morozzi Augusto Nascetti Stefania Pallotta Andrea Papi Daniele Passeri Marco Petasecca Giada Petringa Igor Pis Pisana Placidi Gianluca Quarta Silvia Rizzato Alessandro Rossi Giulia Rossi Federico Sabbatini Andrea Scorzoni Leonello Servoli Alberto Stabile Silvia Tacchi Cinzia Talamonti Jonathan Thomet Luca Tosti Giovanni Verzellesi Mattia Villani Richard James Wheadon Nicolas Wyrsch Nicola Zema Maddalena Pedio Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance Nanomaterials amorphous hydrogenated silicon photoemission inverse photoemission flexible substrate radiation detector Raman |
| title | Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance |
| title_full | Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance |
| title_fullStr | Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance |
| title_full_unstemmed | Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance |
| title_short | Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance |
| title_sort | mobility gaps of hydrogenated amorphous silicon related to hydrogen concentration and its influence on electrical performance |
| topic | amorphous hydrogenated silicon photoemission inverse photoemission flexible substrate radiation detector Raman |
| url | https://www.mdpi.com/2079-4991/14/19/1551 |
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