Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/796253 |
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| author | Hsu-Hung Hsueh Sin-Liang Ou Chiao-Yang Cheng Dong-Sing Wuu Ray-Hua Horng |
| author_facet | Hsu-Hung Hsueh Sin-Liang Ou Chiao-Yang Cheng Dong-Sing Wuu Ray-Hua Horng |
| author_sort | Hsu-Hung Hsueh |
| collection | DOAJ |
| description | InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications. |
| format | Article |
| id | doaj-art-9e0f27cd7fe041078afce12745c586ce |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-9e0f27cd7fe041078afce12745c586ce2025-02-03T00:59:52ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/796253796253Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone ShapesHsu-Hung Hsueh0Sin-Liang Ou1Chiao-Yang Cheng2Dong-Sing Wuu3Ray-Hua Horng4Graduate Institute of Precision Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 40227, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, TaiwanWafer Works Optronics Corporation, Taoyuan 32542, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, TaiwanGraduate Institute of Precision Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 40227, TaiwanInGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.http://dx.doi.org/10.1155/2014/796253 |
| spellingShingle | Hsu-Hung Hsueh Sin-Liang Ou Chiao-Yang Cheng Dong-Sing Wuu Ray-Hua Horng Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes International Journal of Photoenergy |
| title | Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes |
| title_full | Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes |
| title_fullStr | Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes |
| title_full_unstemmed | Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes |
| title_short | Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes |
| title_sort | performance of ingan light emitting diodes fabricated on patterned sapphire substrates with modified top tip cone shapes |
| url | http://dx.doi.org/10.1155/2014/796253 |
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