1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate
A wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate. Current injection lasing was achieved at the 1380 nm band under continuous-wave operation with AlGaInAs-based multi-q...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adaa4c |
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