Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes
Abstract In this work, AlGaN‐based deep ultraviolet Fabry–Perot (FP) laser diodes (DUV LDs) are designed by using Technology Computer Aided Design (TCAD) simulations, and the physical models for DUV LDs are also developed. It is found that the optical absorption in the p‐region significantly increas...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400247 |
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| author | Jianyu Yang Kangkai Tian Chunshuang Chu Yonghui Zhang Ke Jiang Xiaojuan Sun Dabing Li Xiao Wei Sun Zi‐Hui Zhang |
| author_facet | Jianyu Yang Kangkai Tian Chunshuang Chu Yonghui Zhang Ke Jiang Xiaojuan Sun Dabing Li Xiao Wei Sun Zi‐Hui Zhang |
| author_sort | Jianyu Yang |
| collection | DOAJ |
| description | Abstract In this work, AlGaN‐based deep ultraviolet Fabry–Perot (FP) laser diodes (DUV LDs) are designed by using Technology Computer Aided Design (TCAD) simulations, and the physical models for DUV LDs are also developed. It is found that the optical absorption in the p‐region significantly increases the optical loss and reduces the laser power. Hence, properly increasing the Al composition for the p‐waveguide (p‐WG) and the p‐type cladding layer (CL) helps shift the optical field to the n‐region, which is effective in decreasing the free‐carrier absorption in the p‐region. However, if not properly optimized, this will decrease the optical confinement factor, which will decrease the stimulated recombination rate between electrons and holes. Then, the electron leakage becomes significant. The studies show that the p‐electron blocking layer (p‐EBL) will not strongly affect the optical field profiles. Hence, the Al composition in the p‐EBL has more freedom for electrical optimization. Therefore, a compromised design is required so that both the optical and the electrical properties can be improved. |
| format | Article |
| id | doaj-art-9d2af02086d4467a8688ec73bab277e7 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-9d2af02086d4467a8688ec73bab277e72025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202400247Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser DiodesJianyu Yang0Kangkai Tian1Chunshuang Chu2Yonghui Zhang3Ke Jiang4Xiaojuan Sun5Dabing Li6Xiao Wei Sun7Zi‐Hui Zhang8State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information Engineering Hebei University of Technology 5340 Xiping Road, Beichen Tianjin 300401 ChinaSchool of Integrated Circuits Guangdong University of Technology Guangzhou 510006 ChinaSchool of Integrated Circuits Guangdong University of Technology Guangzhou 510006 ChinaState Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information Engineering Hebei University of Technology 5340 Xiping Road, Beichen Tianjin 300401 ChinaState Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 ChinaState Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 ChinaState Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 ChinaInstitute of Nanoscience and Applications and Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 ChinaState Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information Engineering Hebei University of Technology 5340 Xiping Road, Beichen Tianjin 300401 ChinaAbstract In this work, AlGaN‐based deep ultraviolet Fabry–Perot (FP) laser diodes (DUV LDs) are designed by using Technology Computer Aided Design (TCAD) simulations, and the physical models for DUV LDs are also developed. It is found that the optical absorption in the p‐region significantly increases the optical loss and reduces the laser power. Hence, properly increasing the Al composition for the p‐waveguide (p‐WG) and the p‐type cladding layer (CL) helps shift the optical field to the n‐region, which is effective in decreasing the free‐carrier absorption in the p‐region. However, if not properly optimized, this will decrease the optical confinement factor, which will decrease the stimulated recombination rate between electrons and holes. Then, the electron leakage becomes significant. The studies show that the p‐electron blocking layer (p‐EBL) will not strongly affect the optical field profiles. Hence, the Al composition in the p‐EBL has more freedom for electrical optimization. Therefore, a compromised design is required so that both the optical and the electrical properties can be improved.https://doi.org/10.1002/aelm.202400247AlGaN‐based deep ultraviolet Fabry–Perot laser diodeselectron leakage currentfree‐carrier absorptionoptical field regulation |
| spellingShingle | Jianyu Yang Kangkai Tian Chunshuang Chu Yonghui Zhang Ke Jiang Xiaojuan Sun Dabing Li Xiao Wei Sun Zi‐Hui Zhang Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes Advanced Electronic Materials AlGaN‐based deep ultraviolet Fabry–Perot laser diodes electron leakage current free‐carrier absorption optical field regulation |
| title | Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes |
| title_full | Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes |
| title_fullStr | Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes |
| title_full_unstemmed | Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes |
| title_short | Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes |
| title_sort | design and optimization for algan based deep ultraviolet fabry perot laser diodes |
| topic | AlGaN‐based deep ultraviolet Fabry–Perot laser diodes electron leakage current free‐carrier absorption optical field regulation |
| url | https://doi.org/10.1002/aelm.202400247 |
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