A high-gain, low-noise 3.1â10.6 GHz ultra-wideband LNA in a 0.18μm CMOS

A high-gain, low-noise 3.1â10.6 GHz ultra-wideband LNA in a 0.18μm CMOS

An ultra-wideband (UWB) common gate-common source (CG-CS) low-noise amplifier (LNA) in a 0.18μm CMOS technology is presented in this paper. To obtain a high and flat power gain with low noise and good input impedance matching in the entire 3.1â10.6 GHz UWB band among low power consumption, a capaci...

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Bibliographic Details
Main Authors: Hamid Nooralizadeh, Behnam Babazadeh Daryan
Format: Article
Language:English
Published: OICC Press 2024-02-01
Series:Majlesi Journal of Electrical Engineering
Subjects:
CG-CS amplifier
CMOS technology
Current-reuse technique. Capacitive cross-coupling technique
LNA
UWB
Online Access:https://oiccpress.com/mjee/article/view/4777
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