H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells
Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analy...
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| Format: | Article |
| Language: | English |
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Wiley
2019-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2019/4604932 |
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| author | Abdullah Uzum Hiroyuki Kanda Takuma Noguchi Yuya Nakazawa Shota Taniwaki Yasushi Hotta Yuichi Haruyama Naoyuki Shibayama Seigo Ito |
| author_facet | Abdullah Uzum Hiroyuki Kanda Takuma Noguchi Yuya Nakazawa Shota Taniwaki Yasushi Hotta Yuichi Haruyama Naoyuki Shibayama Seigo Ito |
| author_sort | Abdullah Uzum |
| collection | DOAJ |
| description | Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively. |
| format | Article |
| id | doaj-art-9bbc48f9c1614eb2a0e845a32605eb6c |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-9bbc48f9c1614eb2a0e845a32605eb6c2025-02-03T05:58:02ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2019-01-01201910.1155/2019/46049324604932H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar CellsAbdullah Uzum0Hiroyuki Kanda1Takuma Noguchi2Yuya Nakazawa3Shota Taniwaki4Yasushi Hotta5Yuichi Haruyama6Naoyuki Shibayama7Seigo Ito8Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Electrical Engineering and Computer Sciences, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Electrical Engineering and Computer Sciences, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanDepartment of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, JapanAluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively.http://dx.doi.org/10.1155/2019/4604932 |
| spellingShingle | Abdullah Uzum Hiroyuki Kanda Takuma Noguchi Yuya Nakazawa Shota Taniwaki Yasushi Hotta Yuichi Haruyama Naoyuki Shibayama Seigo Ito H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells International Journal of Photoenergy |
| title | H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells |
| title_full | H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells |
| title_fullStr | H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells |
| title_full_unstemmed | H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells |
| title_short | H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells |
| title_sort | h2o o2 vapor annealing effect on spin coating alumina thin films for passivation of silicon solar cells |
| url | http://dx.doi.org/10.1155/2019/4604932 |
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