Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips
1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. I...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2012/325732 |
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| Summary: | 1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented. |
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| ISSN: | 1687-9503 1687-9511 |