Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena
Abstract The basic structure of resistive random access memory (RRAM), with an insulator between two metal electrodes, closely resembles that of a capacitor. However, most studies have focused on resistive switching characteristics, with little attention to the coexistence with capacitive switching....
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-96782-1 |
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