Growth of Cu2O Nanopyramids by Ion Beam Sputter Deposition
In this study, we have successfully deposited n-type Cu2O triangular nanopyramids on Si by employing ion beam sputter deposition with an Ar : O2 ratio of 9 : 1 at a substrate temperature of 450°C. Scanning electron microscopy measurements showed attractively triangular nanopyramids of ∼500 nm edge a...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2019/4276184 |
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| Summary: | In this study, we have successfully deposited n-type Cu2O triangular nanopyramids on Si by employing ion beam sputter deposition with an Ar : O2 ratio of 9 : 1 at a substrate temperature of 450°C. Scanning electron microscopy measurements showed attractively triangular nanopyramids of ∼500 nm edge and height lengths. Both X-ray diffraction and Raman spectroscopy characterizations showed the structures were single-phase polycrystalline Cu2O, and the room-temperature photoluminescence investigation showed interestingly green and blue exciton luminescence emissions. All Mott—Schottky, linear sweep voltammetry, and photocurrent measurements indicated that the conductivity of the Cu2O pyramids is of n-type. |
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| ISSN: | 1687-8108 1687-8124 |