Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment
We present a detailed frequency noise characterization of an ultrafast diode-pumped solid-state laser operating at 25-GHz repetition rate. The laser is based on the gain material Er:Yb:glass and operates at a wavelength of 1.55 μm. Using a beating measurement with an ultralow-n...
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IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8240971/ |
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| author | Pierre Brochard Valentin Johannes Wittwer Slawomir Bilicki Bojan Resan Kurt John Weingarten Stephane Schilt Thomas Sudmeyer |
| author_facet | Pierre Brochard Valentin Johannes Wittwer Slawomir Bilicki Bojan Resan Kurt John Weingarten Stephane Schilt Thomas Sudmeyer |
| author_sort | Pierre Brochard |
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| description | We present a detailed frequency noise characterization of an ultrafast diode-pumped solid-state laser operating at 25-GHz repetition rate. The laser is based on the gain material Er:Yb:glass and operates at a wavelength of 1.55 μm. Using a beating measurement with an ultralow-noise continuous-wave laser in combination with a dedicated electrical scheme, we measured the frequency noise properties of an optical mode of the 25-GHz laser, of its repetition rate and indirectly of its carrier-envelope offset (CEO) signal without detecting the CEO frequency by the standard approach of nonlinear interferometry. We observed a strong anticorrelation between the frequency noise of the indirect CEO signal and of the repetition rate in our laser, leading to optical modes with a linewidth below 300 kHz in the free-running laser (at 100-ms integration time), much narrower than the individual contributions of the carrier envelope offset and repetition rate. We explain this behavior by the presence of a fixed point located close to the optical carrier in the laser spectrum for the dominant noise source. |
| format | Article |
| id | doaj-art-9b691e59cb85450eacd124e2bc4b2c4c |
| institution | OA Journals |
| issn | 1943-0655 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-9b691e59cb85450eacd124e2bc4b2c4c2025-08-20T02:38:09ZengIEEEIEEE Photonics Journal1943-06552018-01-0110111010.1109/JPHOT.2017.27848578240971Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise AssessmentPierre Brochard0https://orcid.org/0000-0002-3331-4415Valentin Johannes Wittwer1Slawomir Bilicki2https://orcid.org/0000-0002-3914-4680Bojan Resan3Kurt John Weingarten4Stephane Schilt5Thomas Sudmeyer6Laboratoire Temps-Fréquence, Université de Neuchâtel, Neuchâtel, SwitzerlandLaboratoire Temps-Fréquence, Université de Neuchâtel, Neuchâtel, SwitzerlandSYRTE, Observatoire de Paris, PSL Research University, CNRS, Sorbonne Université, LNE, Paris, FranceLumentum Switzerland, Schlieren, SwitzerlandLumentum Switzerland, Schlieren, SwitzerlandLaboratoire Temps-Fréquence, Université de Neuchâtel, Neuchâtel, SwitzerlandLaboratoire Temps-Fréquence, Université de Neuchâtel, Neuchâtel, SwitzerlandWe present a detailed frequency noise characterization of an ultrafast diode-pumped solid-state laser operating at 25-GHz repetition rate. The laser is based on the gain material Er:Yb:glass and operates at a wavelength of 1.55 μm. Using a beating measurement with an ultralow-noise continuous-wave laser in combination with a dedicated electrical scheme, we measured the frequency noise properties of an optical mode of the 25-GHz laser, of its repetition rate and indirectly of its carrier-envelope offset (CEO) signal without detecting the CEO frequency by the standard approach of nonlinear interferometry. We observed a strong anticorrelation between the frequency noise of the indirect CEO signal and of the repetition rate in our laser, leading to optical modes with a linewidth below 300 kHz in the free-running laser (at 100-ms integration time), much narrower than the individual contributions of the carrier envelope offset and repetition rate. We explain this behavior by the presence of a fixed point located close to the optical carrier in the laser spectrum for the dominant noise source.https://ieeexplore.ieee.org/document/8240971/Laser stabilitymode-locked lasersphase noise |
| spellingShingle | Pierre Brochard Valentin Johannes Wittwer Slawomir Bilicki Bojan Resan Kurt John Weingarten Stephane Schilt Thomas Sudmeyer Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment IEEE Photonics Journal Laser stability mode-locked lasers phase noise |
| title | Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment |
| title_full | Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment |
| title_fullStr | Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment |
| title_full_unstemmed | Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment |
| title_short | Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment |
| title_sort | frequency noise characterization of a 25 ghz diode pumped mode locked laser with indirect carrier envelope offset noise assessment |
| topic | Laser stability mode-locked lasers phase noise |
| url | https://ieeexplore.ieee.org/document/8240971/ |
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