Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells
One of the remaining obstacles to achieving the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is high interface recombination loss for minority carriers at the Ohmic contacts. The contact recombination loss of the ultra-thin-film c-Si solar cells is more severe than that of...
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8869914/ |
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| author | Yangsen Kang Huiyang Deng Yusi Chen Yijie Huo Jieyang Jia Li Zhao Zain Zaidi Kai Zang James S. Harris |
| author_facet | Yangsen Kang Huiyang Deng Yusi Chen Yijie Huo Jieyang Jia Li Zhao Zain Zaidi Kai Zang James S. Harris |
| author_sort | Yangsen Kang |
| collection | DOAJ |
| description | One of the remaining obstacles to achieving the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is high interface recombination loss for minority carriers at the Ohmic contacts. The contact recombination loss of the ultra-thin-film c-Si solar cells is more severe than that of the state-of-art thick cells due to the smaller volume and higher minority carrier concentration. This paper presents a design of an electron passing (Ohmic) contact for n-type Si that is hole-blocking with significantly reduced hole recombination. By depositing a thin titanium dioxide (TiO<sub>2</sub>) layer, we form a metal-insulator-semiconductor (MIS) contact for a 2 μm-thick Si cell to achieve an open circuit voltage (<inline-formula><tex-math notation="LaTeX">$V_{oc}$</tex-math></inline-formula>) of 645 mV, which is 10 mV higher than that of an ultra-thin cell with a traditional metal contact. This TiO<sub>2</sub> MIS contact constitutes a step towards high-efficiency ultra-thin-film c-Si solar cells. |
| format | Article |
| id | doaj-art-9b3a766aa0c04bdcb3af5735339c5666 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-9b3a766aa0c04bdcb3af5735339c56662025-08-20T03:33:11ZengIEEEIEEE Photonics Journal1943-06552019-01-011161710.1109/JPHOT.2019.29475828869914Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar CellsYangsen Kang0Huiyang Deng1https://orcid.org/0000-0002-8022-1537Yusi Chen2Yijie Huo3Jieyang Jia4Li Zhao5Zain Zaidi6Kai Zang7https://orcid.org/0000-0003-1488-3177James S. Harris8Department of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USADepartment of Electrical Engineering, Stanford University, CA, USAOne of the remaining obstacles to achieving the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is high interface recombination loss for minority carriers at the Ohmic contacts. The contact recombination loss of the ultra-thin-film c-Si solar cells is more severe than that of the state-of-art thick cells due to the smaller volume and higher minority carrier concentration. This paper presents a design of an electron passing (Ohmic) contact for n-type Si that is hole-blocking with significantly reduced hole recombination. By depositing a thin titanium dioxide (TiO<sub>2</sub>) layer, we form a metal-insulator-semiconductor (MIS) contact for a 2 μm-thick Si cell to achieve an open circuit voltage (<inline-formula><tex-math notation="LaTeX">$V_{oc}$</tex-math></inline-formula>) of 645 mV, which is 10 mV higher than that of an ultra-thin cell with a traditional metal contact. This TiO<sub>2</sub> MIS contact constitutes a step towards high-efficiency ultra-thin-film c-Si solar cells.https://ieeexplore.ieee.org/document/8869914/Silicon photovoltaicultra-thin-filmselective contacttitanium dioxide. |
| spellingShingle | Yangsen Kang Huiyang Deng Yusi Chen Yijie Huo Jieyang Jia Li Zhao Zain Zaidi Kai Zang James S. Harris Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells IEEE Photonics Journal Silicon photovoltaic ultra-thin-film selective contact titanium dioxide. |
| title | Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells |
| title_full | Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells |
| title_fullStr | Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells |
| title_full_unstemmed | Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells |
| title_short | Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells |
| title_sort | titanium dioxide hole blocking layer in ultra thin film crystalline silicon solar cells |
| topic | Silicon photovoltaic ultra-thin-film selective contact titanium dioxide. |
| url | https://ieeexplore.ieee.org/document/8869914/ |
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