The Temperature Changes of the Energy Characteristics of the Surface Layer of InAs Quantum Dots in GaAs Matrix
The work developed a theoretical model for calculating the surface energy characteristics of quantum dots (QD) InAs in the GaAs matrix when the temperature of self-organization. The stated theoretical model allows the calculation of interfacial energy and adhesion parameters InAs QDs in GaAs matrix...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-12-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04065.pdf |
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| Summary: | The work developed a theoretical model for calculating the surface energy characteristics of quantum dots (QD) InAs in the GaAs matrix when the temperature of self-organization. The stated theoretical model allows the calculation of interfacial energy and adhesion parameters InAs QDs in GaAs matrix when the temperature of self-organization. The calculated results provide an opportunity to explore (analyze) the characteristics of interfacial layers at the QD InAs / WL In, WL In / GaAs, QD InAs / GaAs substrate (WL – wetting layer of metal). They can be used for analysis - identifying common patterns of change in the energy parameters of QD InAs in a matrix GaAs (100). In addition, they are useful for modeling changes in the energy characteristics of the surface layers, which characterize the relationship between the mechanisms of relaxation of elastic stresses and the surface energy of GaAs / In / InAs system. |
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| ISSN: | 2077-6772 |