Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide
Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2012/439617 |
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| author | Marina G. Mynbaeva Evgeny L. Pankratov Evgeniy N. Mokhov Karim D. Mynbaev |
| author_facet | Marina G. Mynbaeva Evgeny L. Pankratov Evgeniy N. Mokhov Karim D. Mynbaev |
| author_sort | Marina G. Mynbaeva |
| collection | DOAJ |
| description | Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar. |
| format | Article |
| id | doaj-art-9b262d59ce394769aaf2ad97f361a01c |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-9b262d59ce394769aaf2ad97f361a01c2025-08-20T03:36:57ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242012-01-01201210.1155/2012/439617439617Analysis of Erbium and Vanadium Diffusion in Porous Silicon CarbideMarina G. Mynbaeva0Evgeny L. Pankratov1Evgeniy N. Mokhov2Karim D. Mynbaev3Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, RussiaMathematical Department, Faculty of Radiophysics, Nizhny Novgorod State University, 65 Il’insky Street, Nizhny Novgorod 603950, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, RussiaExperimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.http://dx.doi.org/10.1155/2012/439617 |
| spellingShingle | Marina G. Mynbaeva Evgeny L. Pankratov Evgeniy N. Mokhov Karim D. Mynbaev Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide Advances in Condensed Matter Physics |
| title | Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide |
| title_full | Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide |
| title_fullStr | Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide |
| title_full_unstemmed | Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide |
| title_short | Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide |
| title_sort | analysis of erbium and vanadium diffusion in porous silicon carbide |
| url | http://dx.doi.org/10.1155/2012/439617 |
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