Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation
Energy from renewable sources has developed significantly in the past few decades. Photovoltaics have played a crucial role in the technology employed to generate this type of energy. Technicians and researchers can benefit from systems that offer knowledge and data on the efficiency and performanc...
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Tikrit University
2024-02-01
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| Series: | Tikrit Journal of Pure Science |
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| Online Access: | https://tjpsj.org/index.php/tjps/article/view/1520 |
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| author | Yadgar Hussein Shwan Berun Nasralddin Ghafoor |
| author_facet | Yadgar Hussein Shwan Berun Nasralddin Ghafoor |
| author_sort | Yadgar Hussein Shwan |
| collection | DOAJ |
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Energy from renewable sources has developed significantly in the past few decades. Photovoltaics have played a crucial role in the technology employed to generate this type of energy. Technicians and researchers can benefit from systems that offer knowledge and data on the efficiency and performance of solar cells. In this work the I-V characteristic of photovoltaic of silicon was measured, and the influence of different n-type thicknesses was examined with their different doping concentration; this has been done by PC1D simulation, It would be appropriate for developing silicon single-layer without cost. The n-layer thickness and n-region doping are the factors responsible for a solar cell's efficiency and performance. In this context silicon is the ideal candidate due to the swift increase in their efficiency, and its dependability and stability. In the end, to draw a conclusion around the ideal parameters that a good solar cell has to have, the optimum external quantum efficiencies obtained from this design were (87.71 %) for mono layer front surfaces. The results from these simulation studies prove that it is possible to propose these design parameters for mono layer solar cell fabrication. By adjusting the effectively mentioned parameters, a great efficient and I-V characteristic solar cell has been achieved.
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| format | Article |
| id | doaj-art-9af4e7fc5fc343ed8fc366899737a2d5 |
| institution | Kabale University |
| issn | 1813-1662 2415-1726 |
| language | English |
| publishDate | 2024-02-01 |
| publisher | Tikrit University |
| record_format | Article |
| series | Tikrit Journal of Pure Science |
| spelling | doaj-art-9af4e7fc5fc343ed8fc366899737a2d52025-08-20T03:50:21ZengTikrit UniversityTikrit Journal of Pure Science1813-16622415-17262024-02-0129110.25130/tjps.v29i1.1520Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D SimulationYadgar Hussein Shwan0Berun Nasralddin Ghafoor1Department of Physics- College of education- Sulaimani University, Sulaimani, Iraq,46001Department of Physics- College of education- Sulaimani University, Sulaimani, Iraq,46001 Energy from renewable sources has developed significantly in the past few decades. Photovoltaics have played a crucial role in the technology employed to generate this type of energy. Technicians and researchers can benefit from systems that offer knowledge and data on the efficiency and performance of solar cells. In this work the I-V characteristic of photovoltaic of silicon was measured, and the influence of different n-type thicknesses was examined with their different doping concentration; this has been done by PC1D simulation, It would be appropriate for developing silicon single-layer without cost. The n-layer thickness and n-region doping are the factors responsible for a solar cell's efficiency and performance. In this context silicon is the ideal candidate due to the swift increase in their efficiency, and its dependability and stability. In the end, to draw a conclusion around the ideal parameters that a good solar cell has to have, the optimum external quantum efficiencies obtained from this design were (87.71 %) for mono layer front surfaces. The results from these simulation studies prove that it is possible to propose these design parameters for mono layer solar cell fabrication. By adjusting the effectively mentioned parameters, a great efficient and I-V characteristic solar cell has been achieved. https://tjpsj.org/index.php/tjps/article/view/1520PC1DCharacteristic I-VSolar cellp-n junctionEfficiency |
| spellingShingle | Yadgar Hussein Shwan Berun Nasralddin Ghafoor Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation Tikrit Journal of Pure Science PC1D Characteristic I-V Solar cell p-n junction Efficiency |
| title | Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation |
| title_full | Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation |
| title_fullStr | Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation |
| title_full_unstemmed | Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation |
| title_short | Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation |
| title_sort | study the effect of doping and thickness on i v characteristic of silicon solar cells using pc1d simulation |
| topic | PC1D Characteristic I-V Solar cell p-n junction Efficiency |
| url | https://tjpsj.org/index.php/tjps/article/view/1520 |
| work_keys_str_mv | AT yadgarhusseinshwan studytheeffectofdopingandthicknessonivcharacteristicofsiliconsolarcellsusingpc1dsimulation AT berunnasralddinghafoor studytheeffectofdopingandthicknessonivcharacteristicofsiliconsolarcellsusingpc1dsimulation |