Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor
Among the transition metal oxides, hematite (α-Fe<sub>2</sub>O<sub>3</sub>) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays wi...
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2024-11-01
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| Series: | Molecules |
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| author | Zhiqiang Yu Qingcheng Wang Jinhao Jia Wenbo Kang Meilian Ou Zhimou Xu |
| author_facet | Zhiqiang Yu Qingcheng Wang Jinhao Jia Wenbo Kang Meilian Ou Zhimou Xu |
| author_sort | Zhiqiang Yu |
| collection | DOAJ |
| description | Among the transition metal oxides, hematite (α-Fe<sub>2</sub>O<sub>3</sub>) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-Fe<sub>2</sub>O<sub>3</sub> nanowire array-based Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays. The as-prepared α-Fe<sub>2</sub>O<sub>3</sub> nanowire array-based Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 10<sup>3</sup> s), and ultralow set voltage (V<sub>set</sub> = +2.63 V) and reset voltage (V<sub>reset</sub> = −2 V). In addition, the space charge-limited conduction (SCLC) mechanism has been proposed to be in the high resistance state, and the formation and destruction of the conductive channels modulated by oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behaviors of the Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors. Our results show the potential of the Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors in nonvolatile memory applications. |
| format | Article |
| id | doaj-art-9ae46e3de70649d2badfbbc02847ce86 |
| institution | OA Journals |
| issn | 1420-3049 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | MDPI AG |
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| series | Molecules |
| spelling | doaj-art-9ae46e3de70649d2badfbbc02847ce862025-08-20T02:38:50ZengMDPI AGMolecules1420-30492024-11-012923560410.3390/molecules29235604Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> MemristorZhiqiang Yu0Qingcheng Wang1Jinhao Jia2Wenbo Kang3Meilian Ou4Zhimou Xu5Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, ChinaFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, ChinaFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, ChinaFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, ChinaFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, ChinaAmong the transition metal oxides, hematite (α-Fe<sub>2</sub>O<sub>3</sub>) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-Fe<sub>2</sub>O<sub>3</sub> nanowire array-based Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays. The as-prepared α-Fe<sub>2</sub>O<sub>3</sub> nanowire array-based Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 10<sup>3</sup> s), and ultralow set voltage (V<sub>set</sub> = +2.63 V) and reset voltage (V<sub>reset</sub> = −2 V). In addition, the space charge-limited conduction (SCLC) mechanism has been proposed to be in the high resistance state, and the formation and destruction of the conductive channels modulated by oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behaviors of the Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors. Our results show the potential of the Au/α-Fe<sub>2</sub>O<sub>3</sub>/FTO memristors in nonvolatile memory applications.https://www.mdpi.com/1420-3049/29/23/5604hydrothermal methodα-Fe<sub>2</sub>O<sub>3</sub> nanowire arraysmemristornonvolatileconductive channelsoxygen vacancies |
| spellingShingle | Zhiqiang Yu Qingcheng Wang Jinhao Jia Wenbo Kang Meilian Ou Zhimou Xu Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor Molecules hydrothermal method α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays memristor nonvolatile conductive channels oxygen vacancies |
| title | Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor |
| title_full | Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor |
| title_fullStr | Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor |
| title_full_unstemmed | Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor |
| title_short | Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe<sub>2</sub>O<sub>3</sub> Memristor |
| title_sort | facile hydrothermal synthesis and resistive switching mechanism of the α fe sub 2 sub o sub 3 sub memristor |
| topic | hydrothermal method α-Fe<sub>2</sub>O<sub>3</sub> nanowire arrays memristor nonvolatile conductive channels oxygen vacancies |
| url | https://www.mdpi.com/1420-3049/29/23/5604 |
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