Effect of defects such as vacancy with oxygen and adsorbed oxygen on electronic structure of graphene plane
The article is devoted to the study of the effect of vacancytype defects with an oxygen atom attached to the graphene plane depending on the concentration of defects. Numerical calculations are performed using the «ab initio» method for a graphene plane with defects in the zone electronic structu...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-09-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/98-101%20%D0%A1%D0%B0%D1%87%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%90..pdf |
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| Summary: | The article is devoted to the study of the effect of vacancytype defects with an oxygen atom attached to the graphene
plane depending on the concentration of defects. Numerical
calculations are performed using the «ab initio» method for a
graphene plane with defects in the zone electronic structure. The
analysis of the dependence of the main parameters of the zone
electronic structure: the width of the band gap, and the mobility
of free charge carriers depending on the concentration and type
of defect. The conditions of formation of the forbidden zone in
the zone structure are studied. The results obtained are applicable
to the analysis of the zone structure of single-wall carbon tubes
containing defects. |
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| ISSN: | 1813-8225 2541-7541 |