Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics
The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink incre...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/921738 |
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| _version_ | 1849404781040238592 |
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| author | Chao-Te Liu Wen-Hsi Lee Jui-Feng Su |
| author_facet | Chao-Te Liu Wen-Hsi Lee Jui-Feng Su |
| author_sort | Chao-Te Liu |
| collection | DOAJ |
| description | The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs. |
| format | Article |
| id | doaj-art-9a71d095540b4e6d8fbaafba43ac8f33 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-9a71d095540b4e6d8fbaafba43ac8f332025-08-20T03:36:53ZengWileyActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/921738921738Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K DielectricsChao-Te Liu0Wen-Hsi Lee1Jui-Feng Su2Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanThe nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.http://dx.doi.org/10.1155/2012/921738 |
| spellingShingle | Chao-Te Liu Wen-Hsi Lee Jui-Feng Su Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics Active and Passive Electronic Components |
| title | Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics |
| title_full | Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics |
| title_fullStr | Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics |
| title_full_unstemmed | Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics |
| title_short | Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics |
| title_sort | pentacene based thin film transistor with inkjet printed nanocomposite high k dielectrics |
| url | http://dx.doi.org/10.1155/2012/921738 |
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