Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
Abstract The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the co...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-05-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400744 |
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| author | Anh Thi Nguyen Jungyoon Cho Malkeshkumar Patel Duc Anh Vu Jungeun Song Dongseok Suh Ambrose Seo Joondong Kim Dong‐Wook Kim |
| author_facet | Anh Thi Nguyen Jungyoon Cho Malkeshkumar Patel Duc Anh Vu Jungeun Song Dongseok Suh Ambrose Seo Joondong Kim Dong‐Wook Kim |
| author_sort | Anh Thi Nguyen |
| collection | DOAJ |
| description | Abstract The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength‐dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS2 and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS2 surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS2/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks. |
| format | Article |
| id | doaj-art-99e66f4d20634eceb711e4fbdc7238d1 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-99e66f4d20634eceb711e4fbdc7238d12025-08-20T01:48:37ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-05-01116n/an/a10.1002/aelm.202400744Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge TransferAnh Thi Nguyen0Jungyoon Cho1Malkeshkumar Patel2Duc Anh Vu3Jungeun Song4Dongseok Suh5Ambrose Seo6Joondong Kim7Dong‐Wook Kim8Department of Physics Ewha Womans University Seoul 03760 South KoreaDepartment of Physics Ewha Womans University Seoul 03760 South KoreaDepartment of Electrical Engineering Incheon National University Incheon 22012 South KoreaDepartment of Energy Science Sungkyunkwan University Suwon 16419 South KoreaDepartment of Physics Ewha Womans University Seoul 03760 South KoreaDepartment of Physics Ewha Womans University Seoul 03760 South KoreaDepartment of Physics Ewha Womans University Seoul 03760 South KoreaDepartment of Electrical Engineering Incheon National University Incheon 22012 South KoreaDepartment of Physics Ewha Womans University Seoul 03760 South KoreaAbstract The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength‐dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS2 and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS2 surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS2/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.https://doi.org/10.1002/aelm.202400744Ag nanowirecharge transferheterojunctionMoS2surface photovoltageZnO |
| spellingShingle | Anh Thi Nguyen Jungyoon Cho Malkeshkumar Patel Duc Anh Vu Jungeun Song Dongseok Suh Ambrose Seo Joondong Kim Dong‐Wook Kim Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer Advanced Electronic Materials Ag nanowire charge transfer heterojunction MoS2 surface photovoltage ZnO |
| title | Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer |
| title_full | Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer |
| title_fullStr | Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer |
| title_full_unstemmed | Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer |
| title_short | Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer |
| title_sort | ag nanowire integrated mos2 zno heterojunctions for highly efficient photogenerated charge transfer |
| topic | Ag nanowire charge transfer heterojunction MoS2 surface photovoltage ZnO |
| url | https://doi.org/10.1002/aelm.202400744 |
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