Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si
BaTiO<sub>3</sub>-based lead-free ferroelectric films with a large recoverable energy density (<i>W<sub>rec</sub></i>) and a high energy efficiency (<i>η</i>) are crucial components for next-generation dielectric capacitors, which are used in energy co...
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2025-06-01
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| author | Fuyu Lv Chao Liu Hongbo Cheng Jun Ouyang |
| author_facet | Fuyu Lv Chao Liu Hongbo Cheng Jun Ouyang |
| author_sort | Fuyu Lv |
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| description | BaTiO<sub>3</sub>-based lead-free ferroelectric films with a large recoverable energy density (<i>W<sub>rec</sub></i>) and a high energy efficiency (<i>η</i>) are crucial components for next-generation dielectric capacitors, which are used in energy conditioning and storage applications in integrated circuits. In this study, grain-engineered (Ba<sub>0.95</sub>,Sr<sub>0.05</sub>)(Zr<sub>0.2</sub>,Ti<sub>0.8</sub>)O<sub>3</sub> (BSZT) ferroelectric thick films (~500 nm) were prepared on Si substrates. These films were deposited at 350 °C, 100 °C lower than the temperature at which the LaNiO<sub>3</sub> buffer layer was deposited on Pt/Ti. This method reduced the (001) grain population due to a weakened interface growth mode, while promoting volume growth modes that produced (110) and (111) grains with a high polarizability. As a result, these films exhibited a maximum polarization of ~88.0 μC/cm<sup>2</sup>, a large <i>W<sub>rec</sub></i> of ~203.7 J/cm<sup>3</sup>, and a high energy efficiency <i>η</i> of 81.2% (@ 6.4 MV/cm). The small-field dielectric constant nearly tripled as compared with that of the same BSZT/LaNiO<sub>3</sub> heterostructure deposited at the same temperature (350 °C or 450 °C). The enhanced linear dielectric response, delayed ferroelectric polarization saturation, and increased dielectric strength due to the nano-grain size, collectively contributed to the improved energy storage performance. This work provides a novel approach for fabricating high-performance dielectric capacitors for energy storage applications. |
| format | Article |
| id | doaj-art-9977978cebac4fbaaad74966153dbd71 |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-9977978cebac4fbaaad74966153dbd712025-08-20T03:16:21ZengMDPI AGNanomaterials2079-49912025-06-01151292010.3390/nano15120920Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on SiFuyu Lv0Chao Liu1Hongbo Cheng2Jun Ouyang3Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaBaTiO<sub>3</sub>-based lead-free ferroelectric films with a large recoverable energy density (<i>W<sub>rec</sub></i>) and a high energy efficiency (<i>η</i>) are crucial components for next-generation dielectric capacitors, which are used in energy conditioning and storage applications in integrated circuits. In this study, grain-engineered (Ba<sub>0.95</sub>,Sr<sub>0.05</sub>)(Zr<sub>0.2</sub>,Ti<sub>0.8</sub>)O<sub>3</sub> (BSZT) ferroelectric thick films (~500 nm) were prepared on Si substrates. These films were deposited at 350 °C, 100 °C lower than the temperature at which the LaNiO<sub>3</sub> buffer layer was deposited on Pt/Ti. This method reduced the (001) grain population due to a weakened interface growth mode, while promoting volume growth modes that produced (110) and (111) grains with a high polarizability. As a result, these films exhibited a maximum polarization of ~88.0 μC/cm<sup>2</sup>, a large <i>W<sub>rec</sub></i> of ~203.7 J/cm<sup>3</sup>, and a high energy efficiency <i>η</i> of 81.2% (@ 6.4 MV/cm). The small-field dielectric constant nearly tripled as compared with that of the same BSZT/LaNiO<sub>3</sub> heterostructure deposited at the same temperature (350 °C or 450 °C). The enhanced linear dielectric response, delayed ferroelectric polarization saturation, and increased dielectric strength due to the nano-grain size, collectively contributed to the improved energy storage performance. This work provides a novel approach for fabricating high-performance dielectric capacitors for energy storage applications.https://www.mdpi.com/2079-4991/15/12/920energy storagedielectric capacitorsferroelectric filmhigh dielectric constantgrain engineeringSi |
| spellingShingle | Fuyu Lv Chao Liu Hongbo Cheng Jun Ouyang Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si Nanomaterials energy storage dielectric capacitors ferroelectric film high dielectric constant grain engineering Si |
| title | Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si |
| title_full | Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si |
| title_fullStr | Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si |
| title_full_unstemmed | Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si |
| title_short | Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si |
| title_sort | achieving a high energy storage performance in grain engineered ba sr zr ti o sub 3 sub ferroelectric films integrated on si |
| topic | energy storage dielectric capacitors ferroelectric film high dielectric constant grain engineering Si |
| url | https://www.mdpi.com/2079-4991/15/12/920 |
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