Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O<sub>3</sub> Ferroelectric Films Integrated on Si
BaTiO<sub>3</sub>-based lead-free ferroelectric films with a large recoverable energy density (<i>W<sub>rec</sub></i>) and a high energy efficiency (<i>η</i>) are crucial components for next-generation dielectric capacitors, which are used in energy co...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/12/920 |
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| Summary: | BaTiO<sub>3</sub>-based lead-free ferroelectric films with a large recoverable energy density (<i>W<sub>rec</sub></i>) and a high energy efficiency (<i>η</i>) are crucial components for next-generation dielectric capacitors, which are used in energy conditioning and storage applications in integrated circuits. In this study, grain-engineered (Ba<sub>0.95</sub>,Sr<sub>0.05</sub>)(Zr<sub>0.2</sub>,Ti<sub>0.8</sub>)O<sub>3</sub> (BSZT) ferroelectric thick films (~500 nm) were prepared on Si substrates. These films were deposited at 350 °C, 100 °C lower than the temperature at which the LaNiO<sub>3</sub> buffer layer was deposited on Pt/Ti. This method reduced the (001) grain population due to a weakened interface growth mode, while promoting volume growth modes that produced (110) and (111) grains with a high polarizability. As a result, these films exhibited a maximum polarization of ~88.0 μC/cm<sup>2</sup>, a large <i>W<sub>rec</sub></i> of ~203.7 J/cm<sup>3</sup>, and a high energy efficiency <i>η</i> of 81.2% (@ 6.4 MV/cm). The small-field dielectric constant nearly tripled as compared with that of the same BSZT/LaNiO<sub>3</sub> heterostructure deposited at the same temperature (350 °C or 450 °C). The enhanced linear dielectric response, delayed ferroelectric polarization saturation, and increased dielectric strength due to the nano-grain size, collectively contributed to the improved energy storage performance. This work provides a novel approach for fabricating high-performance dielectric capacitors for energy storage applications. |
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| ISSN: | 2079-4991 |