Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure
The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greatest influence is exerted by radiation effects cause...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-11-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/2900 |
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