Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield
LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2019/1928494 |
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