Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield
LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2019/1928494 |
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| _version_ | 1849404128166412288 |
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| author | Haifeng Mo Yaohui Zhang Helun Song |
| author_facet | Haifeng Mo Yaohui Zhang Helun Song |
| author_sort | Haifeng Mo |
| collection | DOAJ |
| description | LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data. |
| format | Article |
| id | doaj-art-9905475f8f9943edb7a543bb54c17bc2 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-9905475f8f9943edb7a543bb54c17bc22025-08-20T03:37:05ZengWileyActive and Passive Electronic Components0882-75161563-50312019-01-01201910.1155/2019/19284941928494Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate ShieldHaifeng Mo0Yaohui Zhang1Helun Song2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ChinaLDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.http://dx.doi.org/10.1155/2019/1928494 |
| spellingShingle | Haifeng Mo Yaohui Zhang Helun Song Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield Active and Passive Electronic Components |
| title | Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield |
| title_full | Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield |
| title_fullStr | Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield |
| title_full_unstemmed | Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield |
| title_short | Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield |
| title_sort | design tradeoff of hot carrier immunity and robustness in ldmos with grounded gate shield |
| url | http://dx.doi.org/10.1155/2019/1928494 |
| work_keys_str_mv | AT haifengmo designtradeoffofhotcarrierimmunityandrobustnessinldmoswithgroundedgateshield AT yaohuizhang designtradeoffofhotcarrierimmunityandrobustnessinldmoswithgroundedgateshield AT helunsong designtradeoffofhotcarrierimmunityandrobustnessinldmoswithgroundedgateshield |