Research on the Techniques of High Power SiC-MOSFET Driver
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain voltage active clamping, bridge-arm crosstalk su...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2018-01-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2018.02.006 |
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| Summary: | In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain voltage active clamping, bridge-arm crosstalk suppression, and over-current detection etc, as well as the test aiming at the driver for Mitsubishi SiC-MOSFET module. The results showed that the mirror-current sensing method could give a good protection for SiCMOSFET, and the active clamping could reduce the high voltage surges across the high current turned-off. |
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| ISSN: | 1000-128X |