CALCULATION OF ELASTICALLY STRESSED QUANTUM WELLS HETEROSTRUCTURE AlXGaYIn1-X-YAs/InP FOR EFFICIENT DIODE LASERS
The compositions of epitaxial layers forming quantum-well heterostructures AlxGayIn1-x-yAs / InP for laser diodes with the radiation wavelength of 1.55 μm are calculated. When carrying out the calculations, the problem was to provide the maximum height of the energy barriers for effective limitation...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2018-04-01
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| Series: | Российский технологический журнал |
| Subjects: | |
| Online Access: | https://www.rtj-mirea.ru/jour/article/view/106 |
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