Plasma treatment of MoS2 field-effect transistors using solid-state fluorine source
Plasma treatment using a solid-state fluorine (F) source can mitigate the emission of F-containing gases into the environment. In this study, we investigated the processability of Ar-plasma-mediated F treatment using a polytetrafluoroethylene (PTFE) sheet as the F source. Surface treatment of two-di...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Nano Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2632-959X/addadb |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Plasma treatment using a solid-state fluorine (F) source can mitigate the emission of F-containing gases into the environment. In this study, we investigated the processability of Ar-plasma-mediated F treatment using a polytetrafluoroethylene (PTFE) sheet as the F source. Surface treatment of two-dimensional (2D) semiconductor devices using this method resulted in an improvement in field-effect mobility and a reduction in hysteretic behavior. The prolonged treatment led to heavy p-doping, possibly owing to substitutional F doping. The treatment strength was controllable by the treatment time and sample position during the treatment. Placing the samples upstream resulted in a milder treatment compared to that positioned downstream. The controllability of the proposed method enables us to fine-tune the properties of devices based on 2D materials. The treatment elements could be controlled using sheets made of materials other than PTFE, indicating the broad applicability of this method. |
|---|---|
| ISSN: | 2632-959X |