Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene
The article introduces a genuine ex-situ measurement protocol to estimate the integrated flux of mostly fast (1-2 MeV) neutrons. It is verified up to the fluence of 6.5 × 1018 n/cm2. A dedicated dosimetric platform comprises p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor D...
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Elsevier
2025-08-01
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379725002268 |
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| author | Jakub Jagiełło Artur Dobrowolski Tymoteusz Ciuk Rafał Prokopowicz Barbara Bieńkowska Jakub Włodarczyk Semir El-Ahmar Maciej J. Szary Mirosław Szybowicz |
| author_facet | Jakub Jagiełło Artur Dobrowolski Tymoteusz Ciuk Rafał Prokopowicz Barbara Bieńkowska Jakub Włodarczyk Semir El-Ahmar Maciej J. Szary Mirosław Szybowicz |
| author_sort | Jakub Jagiełło |
| collection | DOAJ |
| description | The article introduces a genuine ex-situ measurement protocol to estimate the integrated flux of mostly fast (1-2 MeV) neutrons. It is verified up to the fluence of 6.5 × 1018 n/cm2. A dedicated dosimetric platform comprises p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 6H-SiC(0001) and a 100-nm-thick atomic-layer-deposited amorphous aluminum oxide encapsulation. The methodology correlates the total area under the averaged Raman spectra of SiC, between 60 cm-1 and 1200 cm-1, upon prior normalization to the maximum value of the longitudinal optical mode at 964 cm-1. The patterned a-Al2O3/QFS-graphene/6H-SiC(0001) system offers two verification mechanisms — one within the graphene mesa and the other outside. Following the protocol, one can read the neutron fingerprint in the material and relate it to the integrated flux. The passive character of the method eliminates the radiological hazards associated with traditional activation methods. The approach enables localized and precise fluence control in fissile and thermonuclear facilities with a Root Mean Squared Percentage Error of the fitted model of approximately 4%. |
| format | Article |
| id | doaj-art-9800cf5dcd4b45d6b93c235a6e55dfde |
| institution | Kabale University |
| issn | 2211-3797 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj-art-9800cf5dcd4b45d6b93c235a6e55dfde2025-08-20T03:45:03ZengElsevierResults in Physics2211-37972025-08-017510833210.1016/j.rinp.2025.108332Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial grapheneJakub Jagiełło0Artur Dobrowolski1Tymoteusz Ciuk2Rafał Prokopowicz3Barbara Bieńkowska4Jakub Włodarczyk5Semir El-Ahmar6Maciej J. Szary7Mirosław Szybowicz8Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland; Corresponding author.Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, PolandŁukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, PolandNational Centre for Nuclear Research, 05-400 Otwock, PolandInstitute of Plasma Physics and Laser Microfusion, Hery 23, 01-497 Warsaw, PolandInstitute of Plasma Physics and Laser Microfusion, Hery 23, 01-497 Warsaw, PolandInstitute of Physics, Poznań University of Technology, Piotrowo 3, 61-138 Poznań, PolandInstitute of Physics, Poznań University of Technology, Piotrowo 3, 61-138 Poznań, PolandInstitute of Materials Research and Quantum Engineering, Poznań University of Technology, Piotrowo 3, 61-138 Poznań, PolandThe article introduces a genuine ex-situ measurement protocol to estimate the integrated flux of mostly fast (1-2 MeV) neutrons. It is verified up to the fluence of 6.5 × 1018 n/cm2. A dedicated dosimetric platform comprises p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 6H-SiC(0001) and a 100-nm-thick atomic-layer-deposited amorphous aluminum oxide encapsulation. The methodology correlates the total area under the averaged Raman spectra of SiC, between 60 cm-1 and 1200 cm-1, upon prior normalization to the maximum value of the longitudinal optical mode at 964 cm-1. The patterned a-Al2O3/QFS-graphene/6H-SiC(0001) system offers two verification mechanisms — one within the graphene mesa and the other outside. Following the protocol, one can read the neutron fingerprint in the material and relate it to the integrated flux. The passive character of the method eliminates the radiological hazards associated with traditional activation methods. The approach enables localized and precise fluence control in fissile and thermonuclear facilities with a Root Mean Squared Percentage Error of the fitted model of approximately 4%.http://www.sciencedirect.com/science/article/pii/S2211379725002268Raman spectroscopyIntegrated fluxFast-neutron dosimetrySilicon carbideEpitaxial grapheneClean energy |
| spellingShingle | Jakub Jagiełło Artur Dobrowolski Tymoteusz Ciuk Rafał Prokopowicz Barbara Bieńkowska Jakub Włodarczyk Semir El-Ahmar Maciej J. Szary Mirosław Szybowicz Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene Results in Physics Raman spectroscopy Integrated flux Fast-neutron dosimetry Silicon carbide Epitaxial graphene Clean energy |
| title | Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene |
| title_full | Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene |
| title_fullStr | Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene |
| title_full_unstemmed | Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene |
| title_short | Dosimetric platform and a genuine Raman protocol for passive estimation of fast-neutron fluence in irradiated SiC and SiC topped with epitaxial graphene |
| title_sort | dosimetric platform and a genuine raman protocol for passive estimation of fast neutron fluence in irradiated sic and sic topped with epitaxial graphene |
| topic | Raman spectroscopy Integrated flux Fast-neutron dosimetry Silicon carbide Epitaxial graphene Clean energy |
| url | http://www.sciencedirect.com/science/article/pii/S2211379725002268 |
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