Optimized Parameter Design of RC Snubber Circuit forSiC-MOSFET Module
This paper proposes a fast optimization design method for RC snubber circuit parameters in order to solve the high switching voltage spikes of SiC while high switching and difficulties in snubber circuit parameters. This method is based on the circuit analysis model of double-pulse circuit including...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2021-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2096-5427.2021.02.010 |
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| Summary: | This paper proposes a fast optimization design method for RC snubber circuit parameters in order to solve the high switching voltage spikes of SiC while high switching and difficulties in snubber circuit parameters. This method is based on the circuit analysis model of double-pulse circuit including parasitic parameters. Different snubber parameter curves are used to determine the optimal interval of circuit parameters and select the best snubber parameters. The simulation and experimental results show that the method can quickly optimize the design of the circuit parameters that meet the requirements for the turn-off voltage spike of SiC switching devices and the total loss of the snubber circuit, and the spike voltage and the loss of the snubber circuits are in the optimal range for system optimization. |
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| ISSN: | 2096-5427 |